STM32L021D4 datasheet(73/114 Pages) STMICROELECTRONICS

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STM32L021x4

Electrical characteristics

To complete these trials, ESD stress can be applied directly on the device, over the range of

specification values. When unexpected behavior is detected, the software can be hardened

to prevent unrecoverable errors occurring (see application note AN1015).

Electromagnetic Interference (EMI)

The electromagnetic field emitted by the device are monitored while a simple application is

executed (toggling 2 LEDs through the I/O ports). This emission test is compliant with

IEC 61967-2 standard which specifies the test board and the pin loading.

6.3.11

Electrical sensitivity characteristics

Based on three different tests (ESD, LU) using specific measurement methods, the device is

stressed in order to determine its performance in terms of electrical sensitivity.

Electrostatic discharge (ESD)

Electrostatic discharges (a positive then a negative pulse separated by 1 second) are

applied to the pins of each sample according to each pin combination. The sample size

depends on the number of supply pins in the device (3 parts × (n+1) supply pins). This test

conforms to the ANSI/JEDEC standard.

Static latch-up

Two complementary static tests are required on six parts to assess the latch-up

performance:

•

A supply overvoltage is applied to each power supply pin

•

A current injection is applied to each input, output and configurable I/O pin

These tests are compliant with EIA/JESD 78A IC latch-up standard.

Table 45. EMI characteristics

Symbol Parameter

Conditions

Monitored

frequency band

Max vs. frequency range

(32 MHz voltage Range 1)

Unit

SEMI

Peak level

VDD = 3.3 V,

TA = 25 °C,

LQFP32 package

compliant with IEC

61967-2

0.1 to 30 MHz

-22

dBµV

30 to 130 MHz

-7

130 MHz to 1GHz

-12

SAE EMI Level

Table 46. ESD absolute maximum ratings

Symbol

Ratings

Conditions

Class

Maximum

value(1)

1. Guaranteed by characterization results, not tested in production.

Unit

VESD(HBM)

Electrostatic discharge

voltage (human body model)

TA = +25 °C,

conforming to

ANSI/JEDEC JS-001

22000

VESD(CDM)

Electrostatic discharge

voltage (charge device

model)

TA = +25 °C,

conforming to

ANSI/ESD STM5.3.1.

500

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