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HMC815BLC5TR-R5 Datenblatt(PDF) 7 Page - Analog Devices

Teilenummer HMC815BLC5TR-R5
Bauteilbeschribung  21 GHz to 27 GHz, GaAs, MMIC, I/Q Upconverter
PDF  30 Pages
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Direct Link  http://www.analog.com
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HMC815BLC5TR-R5 Datenblatt(HTML) 7 Page - Analog Devices

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Data Sheet
HMC815B
Rev. 0 | Page 7 of 30
TYPICAL PERFORMANCE CHARACTERISTICS
IF = 2500 MHz, IF INPUT POWER = 0 dBm, LOWER SIDEBAND (HIGH-SIDE LO)
20
0
2
4
6
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10
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18
20
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25
26
27
28
RF FREQUENCY (GHz)
+85°C
+25°C
–40°C
Figure 10. Conversion Gain vs. RF Frequency over Temperature,
LO Power = 4 dBm
20
0
2
4
6
8
10
12
14
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18
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21
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RF FREQUENCY (GHz)
0dBm
2dBm
4dBm
6dBm
Figure 11. Conversion Gain vs. RF Frequency over LO Powers, TA = 25°C
20
0
2
4
6
8
10
12
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RF FREQUENCY (GHz)
4.25V
4.50V
4.75V
Figure 12. Conversion Gain vs. RF Frequency over VDD1,
LO Power = 4 dBm, TA = 25°C
40
0
5
10
15
20
25
30
35
20
21
22
23
24
25
26
27
28
RF FREQUENCY (GHz)
+85°C
+25°C
–40°C
Figure 13. Sideband Rejection vs. RF Frequency over Temperature,
LO Power = 4 dBm
40
0
5
10
15
20
25
30
35
20
21
22
23
24
25
26
27
28
RF FREQUENCY (GHz)
0dBm
2dBm
4dBm
6dBm
Figure 14. Sideband Rejection vs. RF Frequency over LO Powers, TA = 25°C
40
0
5
10
15
20
25
30
35
20
21
22
23
24
25
26
27
28
RF FREQUENCY (GHz)
4.25V
4.50V
4.75V
Figure 15. Sideband Rejection vs. RF Frequency over VDD1,
LO Power = 4 dBm, TA = 25°C



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