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HMC815BLC5TR-R5 Datenblatt(PDF) 17 Page - Analog Devices

Teilenummer HMC815BLC5TR-R5
Bauteilbeschribung  21 GHz to 27 GHz, GaAs, MMIC, I/Q Upconverter
PDF  30 Pages
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HMC815BLC5TR-R5 Datenblatt(HTML) 17 Page - Analog Devices

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Data Sheet
HMC815B
Rev. 0 | Page 17 of 30
IF = 3750 MHz, RF INPUT POWER = 0 dBm, UPPER SIDEBAND (LOW-SIDE LO)
20
0
2
4
6
8
10
12
14
16
18
21
22
23
24
25
26
27
28
RF FREQUENCY (GHz)
+85°C
+25°C
–40°C
Figure 70. Conversion Gain vs. RF Frequency over Temperature,
LO Power = 4 dBm
20
0
2
4
6
8
10
12
14
16
18
21
22
23
24
25
26
27
28
RF FREQUENCY (GHz)
0dBm
2dBm
4dBm
6dBm
Figure 71. Conversion Gain vs. RF Frequency over LO Powers, TA = 25°C
20
0
2
4
6
8
10
12
14
16
18
21
22
23
24
25
26
27
28
RF FREQUENCY (GHz)
4.25V
4.50V
4.75V
Figure 72. Conversion Gain vs. RF Frequency over VDD1,
LO Power = 4 dBm, TA = 25°C
50
40
0
5
10
15
20
25
30
35
45
21
22
23
24
25
26
28
27
RF FREQUENCY (GHz)
+85°C
+25°C
–40°C
Figure 73. Sideband Rejection vs. RF Frequency over Temperature,
LO Power = 4 dBm
50
40
0
5
10
15
20
25
30
35
45
21
22
23
24
25
26
28
27
RF FREQUENCY (GHz)
0dBm
2dBm
4dBm
6dBm
Figure 74. Sideband Rejection vs. RF Frequency over LO Powers, TA = 25°C
50
40
0
5
10
15
20
25
30
35
45
21
22
23
24
25
26
28
27
RF FREQUENCY (GHz)
4.25V
4.50V
4.75V
Figure 75. Sideband Rejection vs. RF Frequency over VDD1,
LO Power = 4 dBm, TA = 25°C



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