21 GHz to 27 GHz,

GaAs, MMIC, I/Q Upconverter

Data Sheet

HMC815B

Rev. 0

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FEATURES

Conversion gain: 12 dB typical

Sideband rejection: 20 dBc typical

OP1dB compression: 20 dBm typical

OIP3: 27 dBm typical

2× LO to RF isolation: 10 dB typical

2× LO to IF isolation: 15 dB typical

RF return loss: 12 dB typical

LO return loss: 15 dB typical

IF return loss: 15 dB typical

Exposed pad, 4.90 mm × 4.90 mm, 32-terminal, ceramic LCC

APPLICATIONS

Point to point and point to multipoint radios

Military radars, electronic warfare, and electronic

intelligence

Satellite communications

Sensors

FUNCTIONAL BLOCK DIAGRAM

1

3

4

2

5

6

7

8

17

18

19

20

21

22

23

24

×2

NIC

PACKAGE

BASE

GND

NIC

NIC

NIC

NIC

VDD1

NIC

NIC

NIC = NOT INTERNALLY CONNECTED

NIC

VDD3

NIC

NIC

VDD2

NIC

NIC

NIC

Figure 1.

GENERAL DESCRIPTION

The HMC815B is a compact gallium arsenide (GaAs),

pseudomorphic high electron mobility transistor (pHEMT),

monolithic microwave integrated circuit (MMIC) upconverter

in a RoHS compliant package that operates from 21 GHz to

27 GHz. This device provides a small signal conversion gain of

12 dB and a sideband rejection of 20 dBc. The HMC815B

utilizes a driver amplifier proceeded by an in phase/quadrature

(I/Q) mixer where the LO is driven by an active 2× multiplier.

IF1 and IF2 mixer inputs are provided, and an external 90°

hybrid is needed to select the required sideband. The I/Q mixer

topology reduces the need for filtering of unwanted sideband.

The HMC815B is a smaller alternative to hybrid style single

sideband (SSB) downconverter assemblies, and it eliminates the

need for wire bonding by allowing the use of surface-mount

manufacturing techniques.

The HMC815B is available in 4.90 mm × 4.90 mm, 32-terminal

ceramic LCC package and operates over the −40°C to +85°C

temperature range. An evaluation board for the HMC815B is

also available upon request.