5

© 2006 Semtech Corp.

SC475A

www.semtech.com

POWER MANAGEMENT

Parameter

Conditions

25°C

-40° to 85°C

Units

Min

Typ

Max

Min

Max

Fault Protection (continued)

Steady-State

Over-Voltage Fault

FB with Respect to Nominal

+20

+17

+23

%

Steady-State

Over-Voltage Fault Delay

FB Forced 50mV Above

Over-Voltage Fault Threshold

5

μs

G0 Transition

Over-Voltage Fault

FB with Respect to Nominal;

Valid for 32 cycles after G0

Transition

+50

%

Smart Power Save Threshold

FB with Respect to Nominal

+8

%

Latching, >10°C Hysteresis

160

°C

Logic Inputs/Outputs

Logic Input High Voltage

EN, G0

1.2

V

Logic Input Low Voltage

EN, G0

0.4

V

EN Input Bias Current

EN = 5V

-1

+1

μA

G0 Input Bias Current

G0 = 5V

5

0

10

μA

Power Good Output

Low Voltage

R

0.4

V

Gate Drivers

Shoot-Through

DH or DL Rising

30

ns

DL Pull-Down Resistance

0.8

1.6

Ω

DL Sink Current

V

3.1

A

DL Pull-Up Resistance

2

4

Ω

DL Source Current

V

1.3

A

DH Pull-Down Resistance

BST - LX = 5V

2

4

Ω

BST - LX = 5V

2

4

Ω

DH Sink/Source Current

V

1.3

A

Notes:

1) Guaranteed by design.

2) Semtech’s SmartDriver™ FET drive first pulls DH high with a pull-up resistance of 10Ω (typical) until LX = 1.5V (typical). At this point,

an additional pull-up device is activated, reducing the resistance to 2Ω (typical). This negates the need for an external gate or boost resistor.