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SC475AEVB Datenblatt(PDF) 14 Page - Semtech Corporation |
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SC475AEVB Datenblatt(HTML) 14 Page - Semtech Corporation |
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14 / 27 page ![]() 14 © 2006 Semtech Corp. SC475A www.semtech.com POWER MANAGEMENT Note that the presence of Rs/Cs will affect the effective resistance at the FB pin, and therefore modifies the VOUT setpoints. If Rs is used, the following table shows the calculated values for VOUT. VOUT Equation G0 0.75 • (1 + R1/R2) 1 0.75 • (1 + R1/R2 + R1/(R3+Rs)) 0 Enable Input The EN is used to disable or enable the SC475A. When EN is low (grounded), the SC475A is off and in its lowest- power state. When EN is high the controller is enabled and switching will begin. PSAVE Operation The SC475A provides automatic power save operation at light loads. The internal Zero-Cross comparator looks for inductor current (via the voltage across the lower MOSFET) to fall to zero on eight consecutive switching cycles. Once observed, the controller enters power save and turns off the low-side MOSFET on each cycle when the current crosses zero. To add hysteresis, the on-time is increased by 25% in power save. The efficiency improvement at light loads more than offsets the disadvantage of slightly higher output ripple. If the inductor current does not cross zero on any switching cycle, the controller immediately exits power save. Since the controller counts zero crossings, the converter can sink current as long as the current does not cross zero on eight consecutive cycles. This allows the output voltage to recover quickly in response to negative load steps, or to voltage transitions from a higher to a lower voltage where the change exceeds 8%. Smart Power Save Protection In some applications, active loads on VOUT can leak current from a higher voltage and thereby cause VOUT to slowly rise and reach the OVP threshold, causing a hard shutdown; the SC475A uses Smart Power Save to prevent this. When FB exceeds 8% above nominal (810mV), the IC exits power save (if already active) and DL drives high to turn on the low-side MOSFET, which starts to draw current from VOUT via the inductor. When FB drops to the 0.75V trip point, a normal TON switching cycle begins. This cycles energy from VOUT back to VBAT and prevents a hard OVP shutdown, and also minimizes operating power by avoiding continuous conduction-mode operation. If a light load is present, the switching continues for 8 consecutive clock cycles and then the IC will re-enter power save to reduce operating power. Current Limit Circuit Current limiting can be accomplished in two ways. The RDSON of the lower MOSFET can be used as a current sensing element, or a sense resistor at the lower MOSFET source can be used if greater accuracy is needed. RDSON sensing is more efficient and less expensive. In both cases, the R ILIM resistor sets the over-current threshold. The R ILIM connects from the ILIM pin to either the lower MOSFET drain (for RDSON sensing) or the high side of the current-sense resistor. R ILIM connects to a 10μA current source from the ILIM pin which turns on when the low- side MOSFET turns on, after the on-time DH pulse has completed. If the voltage drop across the sense resistor or low-side MOSFET exceeds the voltage across the R ILIM resistor, current limit will activate. The high-side MOSFET is held off until the voltage drop across the sense element (resistor or MOSFET) falls below the voltage across the R ILIM resistor. This current sensing scheme actually regulates the inductor valley current, (see Figure 10). This means that if the current limit is set to 10A, the peak current through the inductor would be 10A plus the peak ripple current, and the average current through the inductor would be 10A plus 1/2 the peak-to-peak ripple current. Applications Information (continued) |
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