CMV2000 datasheet(16/87 Pages) AMSOSRAM

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CMV2000

Specification overview

Datasheet

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Specification overview

Below are the typical electro-optical specifications of CMV2000. These are typical values with

typical supplies at room temperature.

Table 7: Electro-optical characteristics

Specification

Value

Comment

Effective pixels

2048 x 1088

Pixel pitch

5.5 x 5.5 µm2

Optical format

2/3

”

Full well charge

13.5 ke-

Pinned photodiode pixel

Conversion gain

0.075 LSB/e-

10-bit mode, unity gain

Sensitivity

5.56 V/lux.s

0.27 A/W

With microlenses @ 550 nm

Temporal noise

(analog domain)

13 e-

Pipelined global shutter (GS) with correlated double sampling

(CDS). Read noise

Dynamic range

60 dB

Pixel type

Global shutter pixel

Allows fixed pattern noise correction and reset (kTC) noise

canceling through correlated double sampling.

Shutter type

Pipelined global shutter

Exposure of next image during read-out of the previous image.

Parasitic light sensitivity -

Shutter efficiency

<1/50 000

>99.998%

Color filters

Optional

RGB Bayer pattern

Micro lenses

Yes

Fill factor

42%

W/o micro lens

QE * FF

60%

@ 550 nm with micro lenses.

Dark current signal

125 e-/s

@ 25 °C die temperature. The dark current doubles with every

6.5 °C increase

DSNU

3 LSB/s

10-bit mode

Fixed pattern noise

<1 LSB RMS

<0.1% of full swing, 10-bit mode

PRNU

< 1% RMS of signal

LVDS output channel

Each data output running @ 480 Mbit/s.

8, 4 and 2 outputs selectable at reduced frame rate

Frame rate

340 frames/s

Using a 10-bit/pixel and 480 Mbit/s LVDS.

Higher frame rate possible in row windowing mode.

Timing generation

On-chip

Possibility to control exposure time through external pin.

PGA

Yes

4 analog gain settings

Programmable registers

Sensor parameters

Window coordinates, Timing parameters, Gain & offset,

Exposure time, flipped read-

out in X and Y direction …

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