Table 12. Cycling performance by groups of four bytes

Symbol

Parameter

Test condition

Max.

Unit

Ncycle

Write cycle endurance(1)

TA ≤ 25 °C, VCC(min) < VCC < VCC(max)

4 000 000

Write cycles(2)

TA = 85°C, VCC(min) < VCC < VCC(max)

1 200 000

1. The write cycle endurance is defined by characterization and qualification. For devices embedding the ECC functionality, the

write cycle endurance is defined for group of four bytes located at addresses [4*N, 4*N+1, 4*N+2, 4*N+3] where N is an

integer.

2. A write cycle is executed when either a write CDA, SWP register, a page write, a byte write , a write identification page or

a lock identification page instruction is decoded. When using the byte write, the page write or the write identification page,

refer also to Section 6.1.3 ECC (error correction code) and write cycling.

Table 13. Memory cell data retention

Parameter

Test condition

Min.

Unit

Data retention (1)

TA = 55 °C

200

Year

1. The data retention behaviour is checked in production, while the data retention limit defined in this table is extracted from

characterization and qualification results.

Table 14. DC characteristics

Symbol

Parameter

Test conditions

Min.

Max.

Unit

ILI

Input leakage current

(SCL, SDA)

VIN = VSS or VCC

device in Standby mode

-

± 2

µA

ILO

Output leakage current

SDA in Hi-Z, external voltage applied on SDA: VSS or VCC

-

± 2

µA

ICC

Supply current (Read)

fC = 400 kHz

-

0.5

mA

fC = 1 MHz

-

1

ICC0

Supply current (Write)

During tW

1.65 V ≤ VCC ≤ 3.6 V

-

1 (1)

mA

ICC1

Standby supply current

Device not selected, (2)

VIN = VSS or VCC, VCC < 2.5 V

-

1

µA

Device not selected, (2)

VIN = VSS or VCC, VCC ≥ 2.5 V

-

2

VIL

Input low voltage

(SCL, SDA)

1.6 ≤ VCC < 2.5 V

–0.45

0.25 VCC

V

2.5 ≤ VCC ≤ 3.6 V

–0.45

0.3 VCC

V

VIH

Input high voltage

(SCL, SDA)

1.6 ≤ VCC < 2.5 V

0.75 VCC VCC + 1

V

2.5 ≤ VCC ≤ 3.6 V

0.7 VCC

VCC + 1

V

VOL

Output low voltage

IOL = 1 mA, VCC = 1.65 V

-

0.2

V

IOL = 2.1 mA, VCC = 2.5 V or

IOL = 3 mA, VCC = 3.6 V

-

0.4

V

1. Evaluated by characterization – Not tested in production.

2. The device is not selected after power-up, after a read instruction (after the stop condition), or after the completion of the

internal write cycle tW (tW is triggered by the correct decoding of a write instruction).

M24256X-F

DC and AC parameters

DS12380 - Rev 2

page 28/42