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H7N1002AB Datenblatt(PDF) 4 Page - Renesas Technology Corp |
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H7N1002AB Datenblatt(HTML) 4 Page - Renesas Technology Corp |
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4 / 10 page ![]() H7N1002AB Rev.2.00, Oct.30.2003, page 4 of 9 Main Characteristics 30 10 3 1 0.3 0.1 0.1 0.3 1 3 10 30 100 50 40 30 20 10 0 2 468 10 50 40 30 20 10 0 1 5 0.03 100 Ta = 25 °C 10 V VGS = 3 V 3.4 V Tc = 75 °C 25 °C -25 °C Drain to Source Voltage VDS (V) Maximum Safe Operation Area Drain to Source Voltage VDS (V) Typical Output Characteristics Pulse Test Gate to Source Voltage VGS (V) Typical Transfer Characteristics VDS = 10 V Pulse Test 100 µs 1 ms PW = 10 ms (1shot) DC Operation (Tc = 25 °C) 10 µs 4 V 3.6 V Operation in this area is limited by RDS(on) 2 34 200 150 100 50 0 50 100 150 200 Case Temperature Tc ( °C) Power vs. Temperature Derating 300 |
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