| Datenblatt-Suchmaschine für elektronische Bauteile |
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H7N1002AB Datenblatt(PDF) 2 Page - Renesas Technology Corp |
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H7N1002AB Datenblatt(HTML) 2 Page - Renesas Technology Corp |
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2 / 10 page ![]() H7N1002AB Rev.2.00, Oct.30.2003, page 2 of 9 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 100 V Gate to source voltage VGSS ±20 V Drain current ID 75 A Drain peak current ID(pulse) Note1 300 A Body-drain diode reverse drain current IDR 75 A Avalanche current IAP Note3 50 A Avalanche energy EAR Note3 166 mJ Channel dissipation Pch Note2 100 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25 °C 3. Value at Tch = 25 °C, Rg ≥ 50 Ω |
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