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H7N1002AB Datenblatt(PDF) 6 Page - Renesas Technology Corp

Teilenummer H7N1002AB
Bauteilbeschribung  Silicon N Channel MOS FET High Speed Power Switching
PDF  10 Pages
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Hersteller  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

H7N1002AB Datenblatt(HTML) 6 Page - Renesas Technology Corp

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H7N1002AB
Rev.2.00, Oct.30.2003, page 6 of 9
010
20
30
40
50
2000
5000
10000
1000
100
200
500
200
160
120
80
40
0
20
16
12
8
4
80
160
240
320
400
0
1000
100
1
10
0.1
0.3
1
3
10
30
100
20
50
20000
VGS = 0
f = 1 MHz
Ciss
Coss
Crss
ID = 75 A
VDS
VGS
VDD = 25 V
50 V
80 V
VDD = 80 V
50 V
25 V
r
t
d(on)
t
d(off)
t
t f
VGS = 10 V, VDD = 30 V
PW = 5
µs, duty ≤ 1%
RG = 4.7 Ω
Typical Capacitance vs.
Drain to Source Voltage
Drain to Source Voltage VDS
(V)
Dynamic Input Characteristics
Switching Characteristics
Gate Charge Qg (nC)
Drain Current ID (A)
Body-Drain Diode Reverse
Recovery Time
Reverse Drain Current IDR
(A)
0.1
0.3
1
3
10
30
100
1000
100
20
50
200
500
10
di / dt = 100 A /
µs
VGS = 0, Ta = 25°C



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