H7N1002AB datasheet(1/10 Pages) RENESAS

Teilenummer	H7N1002AB

Bauteilbeschribung	Silicon N Channel MOS FET High Speed Power Switching

PDF	10 Pages

Scroll/Zoom	100%

Hersteller	RENESAS [Renesas Technology Corp]

Direct Link	http://www.renesas.com

Logo

1 / 10 page

Rev.2.00, Oct.30.2003, page 1 of 9

H7N1002AB

Silicon N Channel MOS FET

High Speed Power Switching

REJ03G0130-0200Z

Rev.2.00

Oct.30.2003

Features

• Low on-resistance

RDS(on) = 8 m

Ω typ.

• Low drive current

• Available for 4.5 V gate drive

Outline

TO-220AB

1

2

3

1. Gate

2. Drain

(Flange)

3. Source

D

G

S

Ähnliche Teilenummer - H7N1002AB

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
Renesas Technology Corp	H7N1002LD	110Kb / 9P	Silicon N Channel MOS FET High Speed Power Switching
	H7N1002LD	138Kb / 9P	Silicon N Channel MOS FET High Speed Power Switching
	H7N1002LD-E	110Kb / 9P	Silicon N Channel MOS FET High Speed Power Switching
	H7N1002LD-E	138Kb / 9P	Silicon N Channel MOS FET High Speed Power Switching
	H7N1002LD	138Kb / 9P	Silicon N Channel MOS FET High Speed Power Switching

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
Renesas Technology Corp	H5N1503P	81Kb / 7P	Silicon N Channel MOS FET High Speed Power Switching
	H7N0608LD	118Kb / 12P	Silicon N Channel MOS FET High Speed Power Switching
	HAT2105T	90Kb / 4P	Silicon N Channel MOS FET High Speed Power Switching
	RJK6014DPP	77Kb / 4P	Silicon N Channel MOS FET High Speed Power Switching
	RJK6015DPK	107Kb / 7P	Silicon N Channel MOS FET High Speed Power Switching
	RJK5012DPP	115Kb / 7P	Silicon N Channel MOS FET High Speed Power Switching
	2SK2737	88Kb / 7P	Silicon N Channel MOS FET High Speed Power Switching
	2SK2738	93Kb / 8P	Silicon N Channel MOS FET High Speed Power Switching
	RJK4013DPE	110Kb / 7P	Silicon N Channel MOS FET High Speed Power Switching
	RJK6066DPP-M0	88Kb / 4P	Silicon N Channel MOS FET High Speed Power Switching