| Datenblatt-Suchmaschine für elektronische Bauteile |
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H7N1002AB Datenblatt(PDF) 7 Page - Renesas Technology Corp |
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H7N1002AB Datenblatt(HTML) 7 Page - Renesas Technology Corp |
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7 / 10 page ![]() H7N1002AB Rev.2.00, Oct.30.2003, page 7 of 9 D. U. T Rg I Monitor AP V Monitor DS VDD 50 Ω Vin 15 V 0 I D VDS I AP V(BR)DSS L VDD E = • L • I • 2 1 V V – V AR AP DSS DSS DD 2 200 160 120 80 40 25 50 75 100 125 150 0 IAP = 50 A VDD = 25 V duty < 0.1 % Rg > 50 Ω Channel Temperature Tch ( °C) Maximum Avalanche Energy vs. Channel Temperature Derating Avalanche Test Circuit Avalanche Waveform 0 0.4 0.8 1.2 1.6 2.0 100 80 60 40 20 VGS = 10 V 5 V Pulse Test 0, –5 V Reverses Drain Current vs. Source to Drain Voltage Source Drain Voltage VSD (V) |
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