| Datenblatt-Suchmaschine für elektronische Bauteile |
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H7N1002AB Datenblatt(PDF) 5 Page - Renesas Technology Corp |
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H7N1002AB Datenblatt(HTML) 5 Page - Renesas Technology Corp |
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5 / 10 page ![]() H7N1002AB Rev.2.00, Oct.30.2003, page 5 of 9 200 5 20 100 210 50 5 10 20 50 1 2 0.5 0.01 100 10 100 10 0.1 1 0.02 0.1 1 Static Drain to Source on State Resistance vs. Drain Current 25 °C Tc = –25 °C 75 °C VDS = 10 V Pulse Test Drain Current ID (A) Pulse Test Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance vs. Drain Current Case Temperature Tc ( °C) Drain Current ID (A) VGS = 4.5 V 10 V 0.8 0.6 0.4 0.2 0 5 101520 Drain to Source Saturation Voltage VS. Gate to Source Voltage 1.0 ID = 50 A 20 A 10 A Pulse Test Gate to Source Voltage VGS (V) 40 32 24 16 8 -40 0 40 80 120 160 0 ID = 10 A, 20 A 10 A, 20 A VGS = 4.5 V 10 V Pulse Test 50 A 50 A 200 |
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