H7N1002AB datasheet(3/10 Pages) RENESAS

3 / 10 page

H7N1002AB

Rev.2.00, Oct.30.2003, page 3 of 9

Electrical Characteristics

(Ta = 25°C)

Item

Symbol Min

Typ

Max

Unit

Test Conditions

Drain to source breakdown voltage

V(BR)DSS

100

—

ID = 10 mA, VGS = 0

Gate to source breakdown Voltage

V(BR)GSS ±20

—

IG = ±100

µA, VDS = 0

Gate to source leak current

IGSS

——±10

µAVGS = ±16 V, VDS = 0

Zero gate voltage drain current

IDSS

——10

µAVDS = 100 V, VGS = 0

Gate to source cutoff voltage

VGS(off)

1.5

—

2.5

ID = 1 mA, VDS = 10 V

Note1

Static drain to source on state

RDS(on)

—8

Ω

ID = 37.5 A, VGS = 10 V

Note1

resistance

—

Ω

ID = 37.5 A, VGS = 4.5 V

Note1

Forward transfer admittance

|yfs|

5795—

ID = 37.5 A, VDS = 10 V

Note1

Input capacitance

Ciss

—

9700

—

VDS = 10 V

Output capacitance

Coss

—

740

—

VGS = 0

Reverse transfer capacitance

Crss

—

330

—

f = 1 MHz

Total gate charge

—

155

—

VDD = 50 V

Gate to source charge

Qgs

—

VGS = 10 V

Gate to drain charge

Qgd

—

ID = 75 A

Turn-on delay time

td(on)

—43

—

VGS = 10 V, ID = 37.5 A

Rise time

—

245

—

RL = 0.8

Ω

Turn-off delay time

td(off)

—

130

—

Rg = 4.7

Ω

Fall time

—25

—

Body–drain diode forward voltage

VDF

—0.93

—

IF = 75 A, VGS = 0

Body–drain diode reverse recovery

time

trr

—70

—

IF = 75 A, VGS = 0

diF/ dt = 100 A/

µs

Notes: 1. Pulse test

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