OPA607 datasheet(4/52 Pages) TI2

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6 Specifications

6.1 Absolute Maximum Ratings

Over operating free-air temperature range (unless otherwise noted).(1)

MIN

MAX

UNIT

Supply voltage (total bipolar supplies)(4)

±14

VIN

Input voltage

VS– – 0.5

VS+ + 0.5

VIN,Diff

Differential input voltage(2)

±7

Continuous input current

±10

Continuous output current(3)

TA = –40℃ to +85℃

±40

TA = 125℃

±15

Continuous power dissipation

See Section 6.4

Junction temperature

150

°C

Tstg

Storage temperature

–65

125

°C

(1)

Operation outside the Absolute Maximum Ratings may cause permanent device damage. Absolute Maximum Ratings do not imply

functional operation of the device at these or any other conditions beyond those listed under Recommended Operating Conditions.

If used outside the Recommended Operating Conditions but within the Absolute Maximum Ratings, the device may not be fully

functional, and this may affect device reliability, functionality, performance, and shorten the device lifetime.

(2)

Equal to the lower of ±7 V or total supply voltage.

(3)

Long-term continuous output current for electromigration limits.

(4)

VS is the total supply voltage given by VS = VS+ – VS– .

6.2 ESD Ratings

VALUE

UNIT

V(ESD)

Electrostatic discharge

Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)

±2500

Charged-device model (CDM), per ANSI/ESDA/JEDEC JS-002(2)

±1500

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

Over operating free-air temperature range (unless otherwise noted).

MIN

NOM

MAX

UNIT

Total supply voltage

4.75

Ambient temperature

–40

125

°C

6.4 Thermal Information

THERMAL METRIC(1)

OPA810

UNIT

D (SOIC)

DBV (SOT-23)

DCK (SC70)

8 PINS

5 PINS

RθJA

Junction-to-ambient thermal resistance

134.8

174.3

190.8

°C/W

RθJC(top) Junction-to-case (top) thermal resistance

75.2

94.7

140.1

°C/W

RθJB

Junction-to-board thermal resistance

78.2

45.4

69.0

°C/W

ψJT

Junction-to-top characterization parameter

25.2

21.6

45.9

°C/W

ψJB

Junction-to-board characterization parameter

77.4

45.0

68.8

°C/W

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

OPA810

SBOS799E – AUGUST 2019 – REVISED AUGUST 2024

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