OPA607 datasheet(7/52 Pages) TI2

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6.6 Electrical Characteristics: 24 V

at TA = 25°C, VS+ = 12 V, VS– = –12 V, common-mode voltage (VCM) = mid-supply, and RL = 1 kΩ connected to mid-supply(1)

(unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Test

Level(2)

AC PERFORMANCE

SSBW

Small-signal bandwidth

G = 1, Vo = 20 mVPP, RF = 0 Ω

135

MHz

G = 1, Vo = 20 mVPP, RF = 0 Ω,

CL= 10 pF

140

G = –1, Vo = 20 mVPP

LSBW

Large-signal bandwidth

G = 2 Vo = 2 VPP

MHz

G = 2 Vo = 10 VPP

GBWP

Gain-bandwidth product

MHz

Bandwidth for 0.1-dB flatness G = 2, Vo = 20 mVPP

MHz

Slew rate (20%-80%)(3)

G = 2, Vo = –2-V to 2-V step

237

V/µs

G = –1, Vo = –2-V to 2-V step

222

G = 2, Vo = –4.5-V to 3.5-V step

254

Rise time

Vo = 200-mV step

Fall time

Vo = 200-mV step

Settling time to 0.1%

G = 2, Vo = 2-V step

G = 2, Vo = 10-V step

Settling time to 0.001%

G = 2, Vo = 2-V step

320

G = 2, Vo = 10-V step

200

Input overdrive recovery

G = 1, RF = 0 Ω, (VS– – 0.5 V) to

(VS+ + 0.5 V) input

Output overdrive recovery

G = –1, (VS– – 0.5 V) to (VS+ + 0.5 V)

input

HD2

Second-order harmonic

distortion

f = 100 kHz, RL = 1 kΩ, Vo = 2 VPP

–118

dBc

f = 100 kHz, RL =1 kΩ, Vo = 10 VPP

–108

f = 1 MHz, RL = 1 kΩ, Vo = 2 VPP

–112

f = 1 MHz, RL=1 kΩ, Vo = 10 VPP

–91

HD3

Third-order harmonic

distortion

f = 100 kHz, RL = 1 kΩ, Vo = 2 VPP

–136

dBc

f = 100 kHz, RL =1 kΩ, Vo = 10 VPP

–130

f = 1 MHz, RL = 1 kΩ, Vo = 2 VPP

–104

f = 1 MHz, RL =1 kΩ, Vo = 10 VPP

–91

Input-referred voltage noise

Flat-band, 1/f corner at 1.5 kHz

6.3

nV/√Hz

Input-referred current noise

f = 10 kHz

fA/√Hz

Closed-loop output

impedance

f = 100 kHz

0.007

DC PERFORMANCE

AOL

Open-loop voltage gain

f = dc, Vo = ±8 V

108

120

VOS

Input offset voltage

SOIC package

100

500

µV

DBV and DCK packages

100

550

Input offset voltage drift

TA = –40°C to +125°C

2.5

µV/°C

Input bias current

Input offset current

CMRR

Common-mode rejection ratio

f = dc, VCM = ±5 V, SOIC package

105

TA = –40°C to +125°C, SOIC package

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OPA810

SBOS799E – AUGUST 2019 – REVISED AUGUST 2024

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