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T25S16AFEPR Datenblatt(PDF) 24 Page - Shenzhen Huazhimei Semiconductor Co., Ltd

Teilenummer T25S16AFEPR
Bauteilbeschribung  3V 128M-BIT SERIAL NOR FLASH WITH DUAL AND QUAD SPI&QPI
PDF  74 Pages
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Hersteller  HMSEMI [Shenzhen Huazhimei Semiconductor Co., Ltd]
Direct Link  http://www.hmsemi.com/
Logo HMSEMI - Shenzhen Huazhimei Semiconductor Co., Ltd

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Table 6.3 Status Register-3 (SR3)
Bits
Field
Function
Type
Default State
Description
7
HRSW
HOLD# or
RESET#
function
Non-volatile
and Volatile
versions
0
When HRSW=0, the pin acts as HOLD#; when
HRSW=1, the pin acts as RESET#. HRSW
functions are only available when QE=0.
6
DRV1
Output Driver
Strength
0
The DRV1 & DRV0 bits are used to determine
the output driver strength for the Read
operations.
5
DRV0
0
4
HFQ
High
Frequency
Enable Bit
0
0= High Frequency Mode Disabled
1 = High Frequency Mode Enabled
3
Reserve
0
2
WPS
Write Protect
Selection
Non-volatile
and Volatile
versions
0
When WPS=0, the device will use the
combination of CMP, SEC, TB, BP[2:0] bits to
protect a specific area of the memory array.
When WPS=1, the device will utilize the
Individual Block Locks to protect any individual
sector or blocks.
1
Latency
Control
(LC)
Variable SPI
Read Latency
Control
0
Defines the number of read latency cycles in
Fast Read, Dual Out, Quad Out, Dual IO, and
Quad IO commands. See details in Table 6.5.
0
0
Note:
1. LC[1:0] only controls SPI read latency and will be reset to default while switching from QPI to SPI. QPI read latency is set by C0
instruction.
6.2.1 BUSY
BUSY is a read only bit in the status register (SR1[0]) which is set to a “1” state when the device is
executing a Page Program, Sector Erase, Block Erase, Chip Erase or Write Status Register instruction.
During this time the device will ignore further instructions except for the Read Status Register instruction (see
tW, tPP, tSE, tBE, and tCE in AC Characteristics). When the program, erase or write status register instruction has
completed, the BUSY bit will be cleared to a “0” state indicating the device is ready for further instructions.
6.2.2 Write Enable Latch (WEL)
Write Enable Latch (WEL) is a read only bit in the status register (SR1[1]) which is set to a 1 after
executing a Write Enable Instruction. The WEL status bit is cleared to a 0 when the device is written disabled.
A write disable state occurs upon power-up or after any of the following instructions: Write Disable, Page
Program, Sector Erase, Block Erase, Chip Erase and Write Status Register.
6.2.3 Block Protect Bits (BP2, BP1, BP0)
The Block Protect Bits (BP2, BP1, BP0) are non-volatile read / write bits in the Status Register (SR1[4:2]) that
provide Write Protection control and status. Block Protect bits can be set using the Write Status Registers
Command (see tW in Section 8.5). All, none or a portion of the memory array can be protected from Program
and Erase commands (see Section 6.4.2, Block Protection Maps). The factory default setting for the Block
Protection Bits is 0 (none of the array is protected.)
6.2.4 Top / Bottom Block Protect (TB)
The non-volatile Top / Bottom bit (TB SR1[5]) controls whether the Block Protect Bits (BP2, BP1, BP0)
protect from the Top (TB=0) or the Bottom (TB=1) of the array as shown in Section 6.4.2, Block Protection
Maps. The factory default setting is TB=0. The TB bit can be set with the Write Status Registers Command
depending on the state of the SRP0, SRP1 and WEL bits.
HM25Q128A



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