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T25S16AFEPR Datenblatt(PDF) 28 Page - Shenzhen Huazhimei Semiconductor Co., Ltd

Teilenummer T25S16AFEPR
Bauteilbeschribung  3V 128M-BIT SERIAL NOR FLASH WITH DUAL AND QUAD SPI&QPI
PDF  74 Pages
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Hersteller  HMSEMI [Shenzhen Huazhimei Semiconductor Co., Ltd]
Direct Link  http://www.hmsemi.com/
Logo HMSEMI - Shenzhen Huazhimei Semiconductor Co., Ltd

T25S16AFEPR Datenblatt(HTML) 28 Page - Shenzhen Huazhimei Semiconductor Co., Ltd

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The BP method allows a portion as small as 4-kB sector or the entire memory array to be configured as
read only. Used in conjunction with the Write Protect (WP#) pin, changes to the Status Register can be
enabled or disabled under hardware control. See the Table 6.4 for further information.
The
HM25Q128A
also provides another Write Protect method using the Individual Block Locks. Each
64KB block (except the top and bottom blocks, total of 126 blocks) and each 4KB sector within the top/bottom
blocks (total of 32 sectors) are equipped with an Individual Block Lock bit. When the lock bit is 0, the
corresponding sector or block can be erased or programmed; when the lock bit is set to 1, Erase or Program
commands issued to the corresponding sector or block will be ignored. When the device is powered on, all
Individual Block Lock bits will be 1, so the entire memory array is protected from Erase/Program. An
“
Individual Block Unlock (39h)” instruction must be issued to unlock any specific sector or block.
Additionally, the Deep Power-Down (DPD) command offers an alternative means of data protection as all
commands are ignored during the DPD state, except for the Release from Deep-Power-Down (RES ABh)
command. Thus, preventing any program or erase during the DPD state.
HM25Q128A



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