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T25S16AFEPR Datenblatt(PDF) 32 Page - Shenzhen Huazhimei Semiconductor Co., Ltd

Teilenummer T25S16AFEPR
Bauteilbeschribung  3V 128M-BIT SERIAL NOR FLASH WITH DUAL AND QUAD SPI&QPI
PDF  74 Pages
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Hersteller  HMSEMI [Shenzhen Huazhimei Semiconductor Co., Ltd]
Direct Link  http://www.hmsemi.com/
Logo HMSEMI - Shenzhen Huazhimei Semiconductor Co., Ltd

T25S16AFEPR Datenblatt(HTML) 32 Page - Shenzhen Huazhimei Semiconductor Co., Ltd

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6.4. Page Program
To program one data byte, two instructions are required: Write Enable (WREN), which is one byte, and a
Page Program (PP) sequence, which consists of four bytes plus data. This is followed by the internal Program
cycle (of duration tPP). To spread this overhead, the Page Program (PP) instruction allows up to 256 bytes to
be programmed at a time (changing bits from 1 to 0), provided that they lie in consecutive addresses on the
same page of memory.
6.5. Sector Erase, Block Erase and Chip Erase
The Page Program (PP) instruction allows bits to be reset from 1 to 0. Before this can be applied, the
bytes of memory need to be erased to all 1s (FFh). This can be achieved a sector at a time, using the Sector
Erase (SE) instruction, a block at a time using the Block Erase (BE) instruction or throughout the entire
memory, using the Chip Erase (CE) instruction. This starts an internal Erase cycle (of duration tSE tBE or tCE).
The Erase instruction must be preceded by a Write Enable (WREN) instruction.
6.6. Polling during a Write, Program or Erase Cycle
A further improvement in the time to Write Status Register (WRSR), Program (PP) or Erase (SE, BE or
CE) can be achieved by not waiting for the worst case delay (tW, tPP, tSE, tBE or tCE). The Write In Progress (WIP)
bit is provided in the Status Register so that the application program can monitor its value, polling it to
establish when the previous Write cycle, Program cycle or Erase cycle is complete.
6.7. Active Power, Stand-by Power and Deep Power-Down Modes
When Chip Select (CS#) is Low, the device is enabled, and in the Active Power mode. When Chip Select
(CS#) is High, the device is disabled, but could remain in the Active Power mode until all internal cycles have
completed (Program, Erase, Write Status Register). The device then goes into the Standby Power mode. The
device consumption drops to ICC1.
The Deep Power-down mode is entered when the specific instruction (the Enter Deep Power-down Mode
(DP) instruction) is executed. The device consumption drops further to ICC2. The device remains in this mode
until another specific instruction (the Release from Deep Power-down Mode and Read Device ID (RDI)
instruction) is executed.
All other instructions are ignored while the device is in the Deep Power-down mode. This can be used as
an extra software protection mechanism, when the device is not in active use, to protect the device from
inadvertent Program or Erase instructions.
HM25Q128A



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