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STM32U595AI Datenblatt(PDF) 185 Page - STMicroelectronics |
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STM32U595AI Datenblatt(HTML) 185 Page - STMicroelectronics |
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185 / 377 page ![]() DS13633 Rev 1 185/377 STM32U59xxx Electrical characteristics 343 5.3.3 Embedded reset and power control block characteristics The parameters given in the table below are derived from tests performed under the ambient temperature conditions summarized in Table 32. Table 34. Embedded reset and power control block characteristics(1) Symbol Parameter Conditions Min Typ Max Unit tRSTTEMPO(2) Reset temporization after BOR0 is detected VDD rising - - 900 μs VBOR0 Brownout reset threshold 0 Rising edge 1.6 1.66 1.71 V Falling edge, range 1, 2, 3 1.58 1.64 1.69 Falling edge, range 4 and low-power modes 1.58 1.64 1.69 VBOR1 Brownout reset threshold 1 Rising edge 1.98 2.08 2.17 Falling edge 1.9 2.00 2.1 VBOR2 Brownout reset threshold 2 Rising edge 2.18 2.29 2.39 Falling edge 2.08 2.18 2.25 VBOR3 Brownout reset threshold 3 Rising edge 2.48 2.59 2.7 V Falling edge 2.39 2.5 2.61 VBOR4 Brownout reset threshold 4 Rising edge 2.76 2.88 3.0 Falling edge 2.67 2.79 2.9 VPVD0 Programmable voltage detector threshold 0 Rising edge 2.03 2.13 2.23 Falling edge 1.93 2.03 2.12 VPVD1 PVD threshold 1 Rising edge 2.18 2.29 2.39 Falling edge 2.08 2.18 2.28 VPVD2 PVD threshold 2 Rising edge 2.33 2.44 2.55 Falling edge 2.23 2.34 2.44 VPVD3 PVD threshold 3 Rising edge 2.47 2.59 2.7 Falling edge 2.39 2.50 2.61 VPVD4 PVD threshold 4 Rising edge 2.6 2.72 2.83 Falling edge 2.5 2.62 2.73 VPVD5 PVD threshold 5 Rising edge 2.76 2.88 3.0 Falling edge 2.66 2.78 2.9 VPVD6 PVD threshold 6 Rising edge 2.83 2.96 3.08 Falling edge 2.76 2.88 3.0 Vhyst_BOR0 Hysteresis voltage of BOR0 - - 20 - mV Vhyst_BOR_PVD Hysteresis voltage of BOR (except BOR0) and PVD -- 80 - tBOR0 _sampling BOR0 sampling period ULPMEN = 1 - 30 55 ms |
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