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STM32U595AI Datenblatt(PDF) 228 Page - STMicroelectronics |
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STM32U595AI Datenblatt(HTML) 228 Page - STMicroelectronics |
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228 / 377 page ![]() IDD(VBAT with RTC) Supply current in VBAT mode (backup registers retained), RTC enabled RTC(1) clocked by LSE quartz in low-drive mode 1.8 0.53 0.64 1.05 1.70 3.10 µA 2.4 0.58 0.69 1.15 1.85 3.30 3 0.68 0.83 1.35 2.25 3.95 3.3 0.79 1.00 1.80 3.05 5.50 3.6 1.05 1.35 2.30 3.65 6.35 RTC(1) clocked by LSE quartz in low-drive mode, RTC_CALR.LPCAL =1 1.8 0.44 0.56 0.95 1.65 3.00 2.4 0.46 0.58 1.00 1.75 3.20 3 0.52 0.67 1.20 2.10 3.80 3.3 0.62 0.84 1.60 2.85 5.35 3.6 0.86 1.15 2.10 3.45 6.15 IDD (BKPSRAM) Supply current to add in VBAT mode when the backup SRAM is retained - 1.8 0.14 0.19 0.35 0.60 1.00 2.4 0.14 0.20 0.35 0.60 1.00 3 0.14 0.19 0.36 0.60 0.95 3.3 0.14 0.20 0.35 0.60 1.00 3.6 0.15 0.20 0.35 0.60 1.00 1. RTC with default configuration except otherwise specified. Table 62. Current consumption in VBAT mode (continued) Symbol Parameter Conditions Typ Unit -VDD (V) 25°C 55°C 85°C 105°C 125°C |
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