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STM32U595AI Datenblatt(PDF) 254 Page - STMicroelectronics |
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STM32U595AI Datenblatt(HTML) 254 Page - STMicroelectronics |
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254 / 377 page ![]() Electrical characteristics STM32U59xxx 254/377 DS13633 Rev 1 tprog_page One 8-Kbyte page programming time fAHB = 160 MHz, normal mode 60.2 - ms fAHB = 160 MHz, burst mode 24.5 - tprog_bank One 2-Mbyte bank programming time fAHB = 160 MHz, normal mode 15420 - fAHB = 160 MHz, burst mode 6280 - tERASE One 8-Kbyte page erase time 10 k endurance cycles 1.5 2.4 100 k endurance cycles 1.7 3.4 tME Mass erase time (one bank) 10 k endurance cycles 220 616 Mass erase time (two banks) 440 1230 IDD(3) Average consumption from VDD Write mode 2.1 - mA Erase mode 1.3 - Maximum current (peak) Write mode 2.6 - Erase mode 3.0 - 1. Specified by design. Not tested in production. 2. Evaluated by characterization after cycling. Not tested in production. 3. Evaluated by characterization. Not tested in production. Table 77. Flash memory characteristics(1) (continued) Symbol Parameter Conditions Typ Max(2) Unit Table 78. Flash memory endurance and data retention Symbol Parameter Conditions Min(1) Unit NEND Endurance Whole bank TA = –40 to 125 °C 10 kcycles Limited to 256 Kbytes per bank 100 tRET Data retention Whole bank TA = 85 °C after 1 kcycle(2) 30 Years TA = 105 °C after 1 kcycle(2) 15 TA = 125 °C after 1 kcycle(2) 10 TA = 55 °C after 10 kcycle(2) 30 TA = 85 °C after 10 kcycle(2) 15 TA = 105 °C after 10 kcycle(2) 10 Limited to 256 Kbytes per bank TA = 55 °C after 100 kcycle(2) 30 TA = 85 °C after 100 kcycle(2) 15 TA = 105 °C after 100 kcycle(2) 10 1. Evaluated by characterization. Not tested in production. 2. Cycling performed over the whole temperature range. |
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