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STM32U595AI Datenblatt(PDF) 260 Page - STMicroelectronics |
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STM32U595AI Datenblatt(HTML) 260 Page - STMicroelectronics |
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260 / 377 page ![]() Electrical characteristics STM32U59xxx 260/377 DS13633 Rev 1 All I/Os are CMOS- and TTL-compliant (no software configuration required). Their characteristics cover more than the strict CMOS-technology or TTL parameters. The coverage of these requirements is shown in the figure below. Figure 34. I/O input characteristics (all I/Os except BOOT0 and FT_c) Output driving current The GPIOs (except PC13, PC14, PC15) can sink or source up to ±8 mA, and sink or source up to ± 20 mA (with a relaxed VOL/VOH). PC13, PC14, PC15 are limited in source capability: +3 mA shared between the three I/Os. These GPIOs have the same sink capability than other GPIOs. 2. Refer to Figure 34: I/O input characteristics (all I/Os except BOOT0 and FT_c). 3. Specified by design. Not tested in production. 4. This parameter represents the pad leakage of the I/O itself. The total product pad leakage is provided by the following formula: ITotal_Ileak_max = 10 μA + [number of I/Os where VIN is applied on the pad] ₓ Ilkg max. 5. Max (VDDXXX) is the maximum value of all the I/O supplies. The I/O supplies depend on the I/O structure options, as described in Table 25: Legend/abbreviations used in the pinout table. 6. To sustain a voltage higher than Min (VDD, VDDA, VDDUSB, VDDIO2) +0.3 V, the internal pull-up and pull-down resistors must be disabled. 7. Refer to Ibias in the OPAMP characteristics table for the values of the OPAMP dedicated input leakage current. 8. The pull-up and pull-down resistors are designed with a true resistance in series with a switchable PMOS/NMOS. This PMOS/NMOS contribution to the series resistance is minimal (~10% order). MSv69136V1 |
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