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STM32U595AI Datenblatt(PDF) 275 Page - STMicroelectronics |
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STM32U595AI Datenblatt(HTML) 275 Page - STMicroelectronics |
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275 / 377 page ![]() DS13633 Rev 1 275/377 STM32U59xxx Electrical characteristics 343 Figure 37. ADC accuracy characteristics SINAD Signal-to-noise and distortion ratio Single ended 68 74 - dB Differential 73 78 - SNR Signal-to-noise ratio Single ended 68 74 - Differential 73 78 - THD Total harmonic distortion Single ended - -84 -80 Differential - -95 -89 1. Evaluated by characterization for BGA packages. Not tested in production. The values for LQFP packages may differ. 2. ADC DC accuracy values are measured after the internal calibration. 3. Extended calibration mode activated. 4. The I/O analog switch voltage booster is enable when VDDA < 2.4 V (BOOSTEN = 1 in SYSCFG_CFGR1 when VDDA < 2.4 V). The booster is disabled when VDDA ≥ 2.4 V. Resolution = 14 bits, no oversampling. 5. This parameter may degrade in case of digital activity on adjacent I/Os. Table 96. 14-bit ADC12 accuracy(1)(2)(3) (continued) Symbol Parameter Conditions(4) Min Typ Max Unit MSv19880V6 (1) Example of an actual transfer curve (2) Ideal transfer curve (3) End-point correlation line n = ADC resolution ET = total unadjusted error: maximum deviation between the actual and ideal transfer curves EO = offset error: maximum deviation between the first actual transition and the first ideal one EG = gain error: deviation between the last ideal transition and the last actual one ED = differential linearity error: maximum deviation between actual steps and the ideal one EL = integral linearity error: maximum deviation between any actual transition and the end point correlation line 2 n-1 7 6 5 4 3 2 1 0 Output code EO VSSA 2 n-2 2 n-3 VREF+ (VDDA) ET EL ED 1 LSB ideal EG (1) (2) (3) (or )] [1LSB = VDDA 2 n VREF+ 2 n |
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