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STM32U595AI Datenblatt(PDF) 328 Page - STMicroelectronics |
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STM32U595AI Datenblatt(HTML) 328 Page - STMicroelectronics |
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328 / 377 page ![]() Electrical characteristics STM32U59xxx 328/377 DS13633 Rev 1 Figure 70. OCTOSPI HyperBus read Figure 71. OCTOSPI HyperBus read with double latency Figure 72. OCTOSPI HyperBus write MSv47733V3 NCS tACC= Initial access Latency count Command address 47:40 39:32 31:24 23:16 15:8 7:0 Dn A Dn B Dn+1 A Dn+1 B Host drives DQ[7:0] and the memory drives RWDS. CLK, NCLK RWDS DQ[7:0] Memory drives DQ[7:0] and RWDS. tw(CS) tv(RWDS) tv(CLK) tv(DS) tv(DQ) th(CLK) th(DS) tv(OUT) th(OUT) th(DQ) ts(DQ) MSv49351V3 NCS t RWR=Read/write recovery tACC = Access Additional latency Command address 47:40 39:32 31:24 23:16 15:8 7:0 High = 2x latency count Low = 1x latency count Dn A Dn B Dn+1 A Dn+1 B Host drives DQ[7:0] and the memory drives RWDS. RWDS and data are edge aligned CLK, NCLK RWDS DQ[7:0] Memory drives DQ[7:0] and RWDS. tCKDS MSv47734V3 NCS Access latency Latency count Command address 47:40 39:32 31:24 23:16 15:8 7:0 Dn A Dn B Dn+1 A Dn+1 B Host drives DQ[7:0] and the memory drives RWDS. Host drives DQ[7:0] and RWDS. CLK, NCLK RWDS DQ[7:0] tw(CS) tv(RWDS) tv(CLK) th(CLK) High = 2x latency count Low = 1x latency count Read write recovery th(OUT) tv(OUT) th(OUT) tv(OUT) th(OUT) tv(OUT) |
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