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AS8515

Datasheet - AS8515 To p Die Overview

Figure 14. EN Connection for Permanent Normal Mode

7.16 Top Die Block Specifications

This section provides specification of design related key parameters.

7.16.1 Voltage Attenuator

Table 18. Voltage Attenuator

Symbol

Parameter

Condition

Min

Typ

Max

Unit

RDIV

Division ratio

V/V

VSENSE

Input voltage range/

Battery voltage range

4.5

εp,RDIV

Ratio error

At room temperature, VSENSE=12V

±1

εdt1,RDIV

Ratio drift

(with reference to Temperature)

Temperature: -25 to +65º @VSENSE=12V

Maximum values will be added after device

evaluation (to be guaranteed by evaluation)

±0.05

εdt2,RDIV

Temperature: -40 to +125º @VSENSE=12V

Maximum values will be added after device

evaluation (to be guaranteed by evaluation)

±0.2

εdv1,RDIV

Ratio drift

(with reference to VSENSE)

VSENSE: 11V to 13V @Temperature=27º

Maximum values will be added after device

evaluation (to be guaranteed by evaluation)

±0.05

εdv2,RDIV

VSENSE: 6V to 18V @Temperature=27º

Maximum values will be added after device

evaluation (to be guaranteed by evaluation)

±0.2

VCC

RESET

VSUP

LIN

VSS

MCU

+3.3V

CLOAD

VBAT

CIN

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