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MPC5644BCAMMJ1 Datenblatt(PDF) 58 Page - NXP Semiconductors |
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MPC5644BCAMMJ1 Datenblatt(HTML) 58 Page - NXP Semiconductors |
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58 / 116 page ![]() MPC5646C Microcontroller DataSheet, Rev. 7 Electrical Characteristics NXP Semiconductors 58 Table 24. Low voltage power domain electrical characteristics1 1 Except for I DDMAX, all the current values are total current drawn from VDD_HV_A. Symbol C Parameter Conditions2 2 V DD = 3.3 V ± 10% / 5.0 V ± 10%, TA = −40 to 125 °C, unless otherwise specified All temperatures are based on an ambient temperature. Value Unit Min Typ3 3 Target typical current consumption for the following typical operating conditions and configuration. Process = typical, Voltage = 1.2 V. Max4 4 Target maximum current consumption for mode observed under typical operating conditions. Process = Fast, Voltage = 1.32 V. IDDMAX 5 5 Running consumption is given on voltage regulator supply (V DDREG). It does not include consumption linked to I/Os toggling. This value is highly dependent on the application. The given value is thought to be a worst case value with all cores and peripherals running, and code fetched from code flash while modify operation on-going on data flash. It is to be noticed that this value can be significantly reduced by application: switch-off not used peripherals (default), reduce peripheral frequency through internal prescaler, fetch from RAM most used functions, use low power mode when possible. CC D RUN mode maximum average current — — 210 3006,7 6 Higher current may sunk by device during power-up and standby exit. Please refer to in rush current in Table 22. 7 Maximum “allowed” current is package dependent. mA IDDRUN CC P RUN mode typical average current8 8 Only for the “P” classification: Code fetched from RAM: Serial IPs CAN and LIN in loop back mode, DSPI as Master, PLL as system Clock (4 x Multiplier) peripherals on (eMIOS/CTU/ADC) and running at max frequency, periodic SW/WDG timer reset enabled. RUN current measured with typical application with accesses on both code flash and RAM. at 120 MHz TA = 25 °C — 150 2009 mA Dat 80 MHz TA = 25 °C — 1108 15010 mA Pat 120 MHz TA = 125 °C — 180 270 mA IDDHALT CC P HALT mode current11 —TA = 25 °C — 20 27 mA CTA = 125 °C — 35 80 mA IDDSTOP CC P STOP mode current12 No clocks active TA =25°C — 0.4 3 µA CTA = 125 °C — 16 95 mA IDDSTDBY3 (96 KB RAM retained) CC P STANDBY3 mode current13 No clocks active TA = 25 °C — 50 99 µA CTA = 125 °C — 630 3200 µA IDDSTDBY2 (64 KB RAM retained) CC C STANDBY2 mode current14 No clocks active TA = 25 °C — 40 94 µA CTA = 125 °C — 500 2500 µA IDDSTDBY1 (8 KB RAM retained) CC C STANDBY1 mode current15 No clocks active TA = 25 °C — 25 87 µA CTA = 125 °C — 230 1250 µA Adders in LP mode CC T 32 KHz OSC — TA =25°C — — 5 µA 4–40 MHz OSC — TA =25°C — — 3 mA 16 MHz IRC — TA = 25 °C — — 500 µA 128 KHz IRC — TA =25°C — — 5 µA |
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