MPC5644BCAMMJ1 datasheet(63/116 Pages) NXP

63 / 116 page

Electrical Characteristics

MPC5646C Microcontroller DataSheet, Rev. 7

NXP Semiconductors

4.11.2

Electromagnetic interference (EMI)

The product is monitored in terms of emission based on a typical application. This emission test conforms to the IEC61967-1

standard, which specifies the general conditions for EMI measurements.

4.11.3

Absolute maximum ratings (electrical sensitivity)

Based on two different tests (ESD and LU) using specific measurement methods, the product is stressed in order to determine

its performance in terms of electrical sensitivity.

4.11.3.1

Electrostatic discharge (ESD)

Electrostatic discharges (a positive then a negative pulse separated by 1 second) are applied to the pins of each sample according

to each pin combination. The sample size depends on the number of supply pins in the device (3 parts × (n+1) supply pin). This

test conforms to the AEC-Q100-002/-003/-011 standard.

Table 31. EMI radiated emission measurement1,2

1 EMI testing and I/O port waveforms per IEC 61967-1, -2, -4.

2 For information on conducted emission and susceptibility measurement (norm IEC 61967-4), please contact your

local marketing representative.

Symbol

Parameter

Conditions

Value

Unit

Min

Typ

Max

—

SR — Scan range

—

0.150

1000 MHz

fCPU SR — Operating frequency

—

120

—

MHz

VDD_LV SR — LV operating voltages

—

1.28

—

SEMI CC T Peak level

VDD = 5V, TA =25°C,

LQFP176 package

Test conforming to IEC 61967-2,

fOSC = 40 MHz/fCPU = 120 MHz

No PLL frequency

modulation

—

dBµV

± 2% PLL frequency

modulation

——

143

3 All values need to be confirmed during device validation.

dBµV

Table 32. ESD absolute maximum ratings1,2

1 All ESD testing is in conformity with CDF-AEC-Q100 Stress Test Qualification for Automotive Grade Integrated

Circuits.

2 A device will be defined as a failure if after exposure to ESD pulses the device no longer meets the device

specification requirements. Complete DC parametric and functional testing shall be performed per applicable

device specification at room temperature followed by hot temperature, unless specified otherwise in the device

specification.

Symbol

Ratings

Conditions

Class

Max value3

3 Data based on characterization results, not tested in production.

Unit

VESD(HBM) Electrostatic discharge voltage

(Human Body Model)

TA = 25 °C

conforming to AEC-Q100-002

H1C

2000

VESD(MM) Electrostatic discharge voltage

(Machine Model)

TA = 25 °C

conforming to AEC-Q100-003

200

VESD(CDM) Electrostatic discharge voltage

(Charged Device Model)

TA = 25 °C

conforming to AEC-Q100-011

C3A

500

750 (corners)

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