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STM32U595AI Datenblatt(PDF) 323 Page - STMicroelectronics |
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STM32U595AI Datenblatt(HTML) 323 Page - STMicroelectronics |
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323 / 377 page ![]() DS13633 Rev 1 323/377 STM32U59xxx Electrical characteristics 343 5.3.35 OCTOSPI characteristics Unless otherwise specified, the parameters given in Table 137 toTable 139 are derived from tests performed under the ambient temperature, fAHB frequency and VDD supply voltage conditions summarized in Table 32, with the following configuration: • Output speed set to OSPEEDRy[1:0] = 10 • Delay block enabled for DTR (with DQS)/HyperBus • Measurement points done at 0.5 × VDD level • I/O compensation cell activated • HSLV activated when VDD ≤ 2.7 V • Voltage scaling range 1 unless otherwise specified Refer to Section 5.3.14: I/O port characteristics for more details on the input/output alternate function characteristics. Table 135. Switching characteristics for NAND Flash read cycles(1) Symbol Parameter Min Max Unit tw(N0E) FMC_NOE low width 4 × tHCLK - 0.5 4 × tHCLK + 0.5 ns tsu(D-NOE) FMC_D[15-0] valid data before FMC_NOE high 13 - th(NOE-D) FMC_D[15-0] valid data after FMC_NOE high 0 - td(ALE-NOE) FMC_ALE valid before FMC_NOE low - 3 × tHCLK + 0.5 th(NOE-ALE) FMC_NWE high to FMC_ALE invalid 4 × tHCLK - 1 - 1. Evaluated by characterization. Not tested in production. Table 136. Switching characteristics for NAND Flash write cycles(1) Symbol Parameter Min Max Unit tw(NWE) FMC_NWE low width 4 × tHCLK - 0.5 4 × tHCLK + 0.5 ns tv(NWE-D) FMC_NWE low to FMC_D[15-0] valid 0 - th(NWE-D) FMC_NWE high to FMC_D[15-0] invalid 2 × tHCLK + 1 - td(D-NWE) FMC_D[15-0] valid before FMC_NWE high 5 × tHCLK - 5 - td(ALE_NWE) FMC_ALE valid before FMC_NWE low - 3 × tHCLK + 0.5 th(NWE-ALE) FMC_NWE high to FMC_ALE invalid 2 × tHCLK - 0.5 - 1. Evaluated by characterization. Not tested in production. |
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