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RZ/T1 Datenblatt(PDF) 87 Page - Renesas Technology Corp |
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RZ/T1 Datenblatt(HTML) 87 Page - Renesas Technology Corp |
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87 / 139 page ![]() R01DS0228EJ0200 Rev.2.00 Page 87 of 139 Jun. 30, 2025 RZ/T1 Group 2. Electrical Characteristics Note 1. Address pin to be connected to A10 of SDRAM Note 2. DACKn and TENDn are waveforms when “active low” is specified. Figure 2.30 Synchronous DRAM Burst-Read Bus Cycle (Read for 4 Cycles) (Bank Active Mode: PRE + ACT + READ Command, Different Row Address, CAS Latency 2, WTRCD = 0 Cycles) Tc4 tAD1 tAD1 tCSD1 tRWD1 tBSD tDACD CKIO A25 to A0 CS3#, CS2# RD/WR# RAS# D31 to D0 CAS# DQMUU, DQMUL, DQMLU, DQMLL DACK2 to DACK0 TEND2 to TEND0*2 BS# Tr Tc1 Tde tBSD Tc3 A12/A11*1 CKE# tAD1 tAD1 tAD1 tCSD1 tRWD1 tRASD1 tRASD1 tCASD1 tCASD1 tDACD (High) tRDS2 tRDH2 tDQMD1 tDQMD1 Row address Column address Tc2 Td4 Td1 Td3 Td2 tAD1 tAD1 tAD1 tAD1 tRDS2 tRDH2 READ command Tp Trw tAD1 tRWD1 tRASD1 tRASD1 |
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