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RZ/T1 Datenblatt(PDF) 93 Page - Renesas Technology Corp |
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RZ/T1 Datenblatt(HTML) 93 Page - Renesas Technology Corp |
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93 / 139 page ![]() R01DS0228EJ0200 Rev.2.00 Page 93 of 139 Jun. 30, 2025 RZ/T1 Group 2. Electrical Characteristics Note 1. Address pin to be connected to A10 of SDRAM Note 2. DACKn and TENDn are waveforms when “active low” is specified. Figure 2.36 Synchronous DRAM Mode Register Write Timing (WTRP = 1 Cycle) tAD1 tCSD1 tRWD1 CKIO A25 to A0 CS3#, CS2# RD/WR# RAS# D31 to D0 CAS# DQMUU, DQMUL, DQMLU, DQMLL DACK2 to DACK0 TEND2 to TEND0*2 BS# Trr Trc A12/A11*1 CKE# tAD1 tRASD1 tRASD1 tCASD1 Trc Trc tAD1 Tp Tpw tAD1 tRWD1 tRASD1 tRASD1 tCSD1 tCSD1 tCSD1 tCASD1 (Hi-Z) Trr Trc Tmw Tde tAD1 tCSD1 tCSD1 tCSD1 tCSD1 tRWD1 tRWD1 tRWD1 tRASD1 tRASD1 tRASD1 tRASD1 tCASD1 tCASD1 tCASD1 tCASD1 PALL REF REF MRS |
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