MSP432P411VIPZ datasheet(94/212 Pages) TI1

94 / 212 page

MSP432P4111, MSP432P4011, MSP432P411Y

MSP432P401Y, MSP432P411V, MSP432P401V

SLASEA0A – DECEMBER 2017 – REVISED FEBRUARY 2018

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Product Folder Links: MSP432P4111 MSP432P4011 MSP432P411Y MSP432P401Y MSP432P411V MSP432P401V

Specifications

5.26.13 Memories

Table 5-48 lists the general characteristics of the flash memory.

(1)

Program or erase cycle for a bit is defined as the value of bit changing from 1 to 0 to 1.

Table 5-48. Flash Memory

over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)

PARAMETER

MIN

MAX

UNIT

DVCCPGM/ERS

Supply voltage for program or erase

1.62

3.7

IPGM/ERS, PEAK

Peak supply current from DVCC during program or erase

NEndurance

Program or erase endurance(1)

20000

cycles

tRetention

Data retention duration

years

NPGM_TO_ERS

Number of program operations supported between erases per sector

2000

Table 5-49 lists the characteristics of the flash operations using MSP432 peripheral driver libraries.

(1)

MSP432 peripheral driver libraries executed from ROM.

(2)

The maximum value is calculated by multiplying the typical value by NMAX_ERS for the specific erase or program endurance.

(3)

The maximum value is calculated by multiplying the typical value by NMAX_ERS for the specific erase or program endurance and the total

number of sectors in the flash main memory.

Table 5-49. Flash Operations Using MSP432 Peripheral Driver Libraries(1)

over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

tPGM_API, Word

Program time for 32-bit data using

ROM_FlashCtl_programMemory() API

VCORE = 1.4 V, MCLK = 48 MHz

390

µs

tPGM_API, Sector

Program time for 4kB data (one sector)

using ROM_FlashCtl_programMemory() API

VCORE = 1.4 V, MCLK = 48 MHz

5.7

tERS_API, Sector

Sector erase time using

ROM_FlashCtl_eraseSector() API

VCORE = 1.4 V, MCLK = 48 MHz,

Number of erase or program cycles

<1000

309(2)

VCORE = 1.4 V, MCLK = 48 MHz,

Number of erase or program cycles

>1000 and <20000

3035(2)

tERS_API, Mass-Erase

Mass erase time using

ROM_FlashCtl_performMassErase() API

VCORE = 1.4 V, MCLK = 48 MHz,

Number of erase or program cycles

<1000,

Devices with 2MB of flash memory

1292(3)

VCORE = 1.4 V, MCLK = 48 MHz,

Number of erase or program cycles

<1000,

Devices with 1MB of flash memory

816(3)

VCORE = 1.4 V, MCLK = 48 MHz,

Number of erase or program cycles

<1000,

Devices with 512KB of flash memory

578(3)

IAVGPGM_API

Average supply current from DVCC during

program using

ROM_FlashCtl_programMemory() API

VCORE = 1.2 V, MCLK = 3 MHz

IAVGERS_API

Average supply current from DVCC during

erase using

ROM_FlashCtl_eraseSector() API

VCORE = 1.2 V, MCLK = 3 MHz

MSP432P411VIPZ Datenblatt(PDF) 94 Page - Texas Instruments

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