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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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MSP432P411VIPZ Datenblatt(PDF) 95 Page - Texas Instruments |
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MSP432P411VIPZ Datenblatt(HTML) 95 Page - Texas Instruments |
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95 / 212 page  95 MSP432P4111, MSP432P4011, MSP432P411Y MSP432P401Y, MSP432P411V, MSP432P401V www.ti.com SLASEA0A – DECEMBER 2017 – REVISED FEBRUARY 2018 Submit Documentation Feedback Product Folder Links: MSP432P4111 MSP432P4011 MSP432P411Y MSP432P401Y MSP432P411V MSP432P401V Specifications Copyright © 2017–2018, Texas Instruments Incorporated Table 5-50 lists the characteristics of the flash stand-alone operations. Table 5-50. Flash Stand-Alone Operations over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT tPGM, Immediate Program time for one 32-bit data using immediate write mode VER_PRE = 0, VER_PST = 1 52 µs VER_PRE = 1, VER_PST = 1 63 tPGM, Full-word Program time for one 128-bit word using full word write mode VER_PRE = 0, VER_PST = 1 49 µs VER_PRE = 1, VER_PST = 1 70 tPGM, Burst Program time for 4×128-bit burst using burst write mode AUTO_PRE = 0, AUTO_PST = 1 43 µs AUTO_PRE = 1, AUTO_PST = 1 64 tERS Time for sector erase or mass erase 9 ms NMAX_PGM Maximum number of pulses to complete program operation 5 NMAX_ERS Maximum number of pulses to complete erase operation Number of erase or program cycles <1000 34 Number of erase or program cycles >1000 and <20000 334 Table 5-51 lists the characteristics of the SRAM. Table 5-51. SRAM over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT ISRAM_EN Current consumption of one SRAM bank when enabled VCORE = 1.2 V 0.55 20.5 µA VCORE = 1.4 V 1.90 31 ISRAM_RET Current consumption of one SRAM block under retention VCORE = 1.2 V 29 1700 nA VCORE = 1.4 V 36 2300 tSRAM_EN, one Time taken to enable one SRAM bank 8 10 µs tSRAM_DIS, one Time taken to disable one SRAM bank 8 10 µs tSRAM_EN, all Time taken to enable all SRAM banks except Bank 0 18 21 µs tSRAM_DIS, all Time taken to disable all SRAM banks except Bank 0 8 10 µs |
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