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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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MSP432P411VIPZ Datenblatt(PDF) 114 Page - Texas Instruments |
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MSP432P411VIPZ Datenblatt(HTML) 114 Page - Texas Instruments |
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114 / 212 page  114 MSP432P4111, MSP432P4011, MSP432P411Y MSP432P401Y, MSP432P411V, MSP432P401V SLASEA0A – DECEMBER 2017 – REVISED FEBRUARY 2018 www.ti.com Submit Documentation Feedback Product Folder Links: MSP432P4111 MSP432P4011 MSP432P411Y MSP432P401Y MSP432P411V MSP432P401V Detailed Description Copyright © 2017–2018, Texas Instruments Incorporated Table 6-30. FLCTL_A Registers (Base Address: 0x4001_1000) (continued) REGISTER NAME ACRONYM OFFSET Benchmark Instruction Fetch Count FLCTL_BMRK_IFETCH 0D4h Benchmark Data Read Count FLCTL_BMRK_DREAD 0D8h Benchmark Count Compare FLCTL_BMRK_CMP 0DCh Interrupt Flag FLCTL_IFG 0F0h Interrupt Enable FLCTL_IE 0F4h Clear Interrupt Flag FLCTL_CLRIFG 0F8h Set Interrupt Flag FLCTL_SETIFG 0FCh Read Timing Control FLCTL_READ_TIMCTL 100h Read Margin Timing Control FLCTL_READMARGIN_TIMCTL 104h Program Verify Timing Control FLCTL_PRGVER_TIMCTL 108h Erase Verify Timing Control FLCTL_ERSVER_TIMCTL 10Ch Program Timing Control FLCTL_PROGRAM_TIMCTL 114h Erase Timing Control FLCTL_ERASE_TIMCTL 118h Mass Erase Timing Control FLCTL_MASSERASE_TIMCTL 11Ch Burst Program Timing Control FLCTL_BURSTPRG_TIMCTL 120h Main Memory Bank 0 Write/Erase Protection 0 FLCTL_BANK0_MAIN_WEPROT0 200h Main Memory Bank 0 Write/Erase Protection 1 FLCTL_BANK0_MAIN_WEPROT1 204h Main Memory Bank 0 Write/Erase Protection 2 FLCTL_BANK0_MAIN_WEPROT2 208h Main Memory Bank 0 Write/Erase Protection 3 FLCTL_BANK0_MAIN_WEPROT3 20Ch Main Memory Bank 0 Write/Erase Protection 4 FLCTL_BANK0_MAIN_WEPROT4 210h Main Memory Bank 0 Write/Erase Protection 5 FLCTL_BANK0_MAIN_WEPROT5 214h Main Memory Bank 0 Write/Erase Protection 6 FLCTL_BANK0_MAIN_WEPROT6 218h Main Memory Bank 0 Write/Erase Protection 7 FLCTL_BANK0_MAIN_WEPROT7 21Ch Main Memory Bank 1 Write/Erase Protection 0 FLCTL_BANK1_MAIN_WEPROT0 240h Main Memory Bank 1 Write/Erase Protection 1 FLCTL_BANK1_MAIN_WEPROT1 244h Main Memory Bank 1 Write/Erase Protection 2 FLCTL_BANK1_MAIN_WEPROT2 248h Main Memory Bank 1 Write/Erase Protection 3 FLCTL_BANK1_MAIN_WEPROT3 24Ch Main Memory Bank 1 Write/Erase Protection 4 FLCTL_BANK1_MAIN_WEPROT4 250h Main Memory Bank 1 Write/Erase Protection 5 FLCTL_BANK1_MAIN_WEPROT5 254h Main Memory Bank 1 Write/Erase Protection 6 FLCTL_BANK1_MAIN_WEPROT6 258h Main Memory Bank 1 Write/Erase Protection 7 FLCTL_BANK1_MAIN_WEPROT7 25Ch Table 6-31. Precision ADC Registers (Base Address: 0x4001_2000) REGISTER NAME ACRONYM OFFSET Control 0 ADC14CTL0 00h Control 1 ADC14CTL1 04h Window Comparator Low Threshold 0 ADC14LO0 08h Window Comparator High Threshold 0 ADC14HI0 0Ch Window Comparator Low Threshold 1 ADC14LO1 10h Window Comparator High Threshold 1 ADC14HI1 14h Memory Control 0 ADC14MCTL0 18h Memory Control 1 ADC14MCTL1 1Ch Memory Control 2 ADC14MCTL2 20h Memory Control 3 ADC14MCTL3 24h Memory Control 4 ADC14MCTL4 28h Memory Control 5 ADC14MCTL5 2Ch Memory Control 6 ADC14MCTL6 30h |
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