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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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SPSB100 Datenblatt(PDF) 74 Page - STMicroelectronics |
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SPSB100 Datenblatt(HTML) 74 Page - STMicroelectronics |
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74 / 213 page  Symbol Parameter Condition Min Typ Max Unit IBoost_HS_source2 HS driver source current VFBB = 8.5 V VGLB = 8 V 10 25 45 mA RBoost_gate_pulldown Resistive gate pull-down BOOST_DIS = 1 3 5 8 kΩ IVS__stdby Current leakage on VS pin in stdby - - 2 μA IVS_Sense Sink current on VS active mode 120 180 250 μA VBOOST_VDSM1 Boost drain-source rising threshold voltage BOOST_DSMON_TH = 000 220 250 280 mV VBOOST_VDSM2 Boost drain-source rising threshold voltage BOOST_DSMON_TH = 001 420 450 480 mV VBOOST_VDSM3 Boost drain-source rising threshold voltage BOOST_DSMON_TH = 010 610 650 680 mV VBOOST_VDSM4 Boost drain-source rising threshold voltage BOOST_DSMON_TH = 011 800 850 900 mV VBOOST_VDSM5 Boost drain-source rising threshold voltage BOOST_DSMON_TH = 100 1.04 1.1 1.16 V VBOOST_VDSM6 Boost drain-source rising threshold voltage BOOST_DSMON_TH = 101 1.24 1.3 1.36 V VBOOST_VDSM7 Boost drain-source rising threshold voltage BOOST_DSMON_TH = 110 1.35 1.5 1.65 V VBOOST_VDSM8 Boost drain-source rising threshold voltage BOOST_DSMON_TH = 111 1.53 1.7 1.87 V VBOOST_VDSM_HYS_H Boost drain-source threshold voltage hysteresis for high VDSM codes BOOST_DSMON_TH = 1xx 75 100 125 mV VBOOST_VDSM_HYS_L Boost drain-source threshold voltage hysteresis for low VDSM codes BOOST_DSMON_TH = 0xx 25 50 75 mV VTH_BYPASS_R1 Bypass external MOSFET enable comparator rising threshold, rising VVS If BUCK1 and BUCK2 voltage settings are = 3.3 V 8.65 9 9.35 V VTH_BYPASS_F1 Bypass external MOSFET disable comparator falling threshold, rising VVS If BUCK1 and BUCK2 voltage settings are = 3.3 V 8.4 8.75 9.1 V VTH_BYPASS_R2 Bypass external MOSFET enable comparator rising threshold, rising VVS If BUCK1 or BUCK2 voltage settings are above 3.3 V (5.0 or 6.5 V) 10.15 10.50 10.85 V VTH_BYPASS_F2 Bypass external MOSFET disable comparator falling threshold, rising VVS If BUCK1 or BUCK2 voltage settings are above 3.3 V (5.0 or 6.5 V) 9.9 10.25 10.60 V TF_BYPASS_EN(1) digital filter time on bypass external MOSFET enable comparator output 12 15 22 µs TF_BYPASS_DIS(1) digital filter time on bypass external MOSFET disable comparator output 0 0.24 0.4 µs VBYPASS_VDSM1 Bypass drain-source rising threshold voltage BYPASS_DSMON_TH = 000 75 125 175 mV VBYPASS_VDSM2 Bypass drain-source rising threshold voltage BYPASS _DSMON_TH = 001 125 165 225 mV VBYPASS_VDSM3 Bypass drain-source rising threshold voltage BYPASS _DSMON_TH = 010 175 225 275 mV SPSB100 Electrical characteristics DS14640 - Rev 2 page 74/213 |
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