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28HS01GTAM03 Datenblatt(PDF) 3 Page - Infineon Technologies AG

Teilenummer 28HS01GTAM03
Bauteilbeschribung  S256Mb/512Mb/1Gb SEMPER??Flash Octal interface, 1.8V/3.0V
PDF  138 Pages
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Hersteller  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

28HS01GTAM03 Datenblatt(HTML) 3 Page - Infineon Technologies AG

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002-18216 Rev. *W
2022-01-18
256Mb/512Mb/1Gb SEMPER™ Flash
Octal interface, 1.8V/3.0V
Data integrity
Data integrity
Program / Erase (PE) endurance - High endurance (256KB sectors)
Sectors in partition
Minimum PE cycles
Minimum retention
time
Unit
512 (Default for 1Gb devices)
2,560,000
2Years
508
2,540,000
504
2,520,000
...
...
256 (Default for 512Mb devices)
1,280,000
252
1,260,000
128 (Default for 256Mb devices)
640,000
...
28
140,000
24
120,000
20
100,000
Note Minimum cycles is for entire High Endurance Partition.
Program / Erase endurance - Long retention partition (256KB sectors)
Minimum PE cycles
Minimum retention time
Unit
500
25
Years
Note Minimum cycles is for each sector.
Program / Erase endurance 4KB sector and nonvolatile register array
Flash memory type
Minimum cycles
Unit
Minimum
retention time
Unit
Program/Erase cycles per 4KB sector
500
PE cycles
25
Years
300,000
Note It is required to restrict the power loss events
to 300 times per sector during program or erase
operation to achieve the mentioned endurance
cycles.
2
Program/Erase cycles per Persistent Protection
Bits (PPB) array or nonvolatile register array
Note Each write transaction to a nonvolatile
register causes a PE cycle on the entire
nonvolatile register array.
500
25



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