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FS26 Datenblatt(PDF) 89 Page - NXP Semiconductors |
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FS26 Datenblatt(HTML) 89 Page - NXP Semiconductors |
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89 / 156 page ![]() NXP Semiconductors FS26 Safety system basis chip with low power for ASIL D/ASIL B TA = –40 °C to 125 °C, unless otherwise specified. VSUP_UVH < VSUP < 36 V, VPRE_PWM + VPRE_HDR < VSUP_PWR < 36 V, unless otherwise specified. All voltages are referenced to ground. Symbol Description Min Typ Max Unit ηPRE_PWM_PEAK[1] Efficiency in PFM mode COUT_PRE = 22 µF with ESR = 2 mΩ, LPRE = 10 µH with RDCR_LPRE = 60 mΩ, FPRE = 450 kHz VSUP = VSUP_PWR = 12 V and 5.4 V VPRE_PFM = 5.05 V with IPRE_PFM = 1 mA VPRE_PFM_TON_OTP[1:0] = 10 — 90 — % RHS_PRE High-side on-resistance (VBOS = 5 V, including bonding) — 310 500 mΩ RLS_PRE Low-side on-resistance (VBOS = 5 V, including bonding) — 170 300 mΩ RPRE_DIS Discharge resistor (when VPRE is disabled – LPOFF) 20 40 60 Ω TSDPRE Thermal shutdown threshold 175 — — °C TSDPRE_HYST Thermal shutdown threshold hysteresis 5 — 12 °C DC overcurrent flag threshold in PWM mode (set VPREOC_I) IPRE_OC_FLAG[2] VPRE_OC_OTP[2:0] = 000 VPRE_OC_OTP[2:0] = 001 VPRE_OC_OTP[2:0] = 010 VPRE_OC_OTP[2:0] = 011 VPRE_OC_OTP[2:0] = 100 VPRE_OC_OTP[2:0] = 101 VPRE_OC_OTP[2:0] = 110 VPRE_OC_OTP[2:0] = 111 0.45 0.65 0.85 1.12 1.30 1.49 1.68 1.87 0.66 0.88 1.1 1.32 1.54 1.76 1.98 2.2 1.0 1.25 1.45 1.70 1.95 2.12 2.38 2.64 A ILIM_PRE VPRE output DC current limitation threshold in PWM mode 1.95 2.42 2.9 A VPRE_OVP Main overvoltage protection on VPRE output (relative to VPRE output voltage setting) 20 25 30 % Dynamic electrical characteristics tPRE_OVP Overvoltage deglitch time 1 2 3 µs tPRE_DEAD Dead time to avoid cross conduction 1 — 20 ns Soft start ramp from 0 % to 100 % defined at IPRE_PWM = 0 A tPRE_SS VPRE_SS_OTP[1:0] = 00 (COUT_PRE ≤ 44 μF nominal) VPRE_SS_OTP[1:0] = 01 VPRE_SS_OTP[1:0] = 10 VPRE_SS_OTP[1:0] = 11 200 431 873 1753 269 538 1077 2150 410 645 1281 2547 µs DVS down ramp rate during low-power mode transition VPRE_DVS_DOWN VPRE_LP_DVS_OTP[1:0] = 00 (COUT_PRE ≤ 44 μF nominal) VPRE_LP_DVS_OTP[1:0] = 01 VPRE_LP_DVS_OTP[1:0] = 10 VPRE_LP_DVS_OTP[1:0] = 11 18 9 4.5 2.25 22 11 5.5 2.75 27 13.5 6.75 3.375 mV/µs VPRE_LINE_REG_450K_PWM Transient line in PWM mode with FPRE = 450 kHz VBAT = 6 V - 18 V – 6 V and 14 V - 35 V - 14 V IPRE_PWM = 0 A and 1.5 A for VPRE_PWM = 3.3 V IPRE_PWM = 0 A and 0.6 A for VPRE_PWM = 5.0 V dV/dt = 100 mV/µs, LPRE = 10 μH, CIN_PRE = 47 µF + PI filter, COUT_PRE = 44 μF -1.5 — 1.5 % VPRE_LINE_REG_450K_DO Transient line after drop out exit with FPRE = 450 kHz VBAT = VPRE_PWM - 0.4 V to 14 V IPRE_PWM = 0 A and 0.6 A for VPRE_PWM = 5.0 V dV/dt = 100 mV/µs, LPRE = 10 μH, CIN_PRE = 47 µF + PI filter, COUT_PRE = 44 μF -3 — 3 % VPRE_LOTR_450K_PWM Transient load response in PWM mode with FPRE = 450 kHz 10 mA to 800 mA step and 800 mA to 10 mA step 800 mA to 1.5 A step and 1.5 A to 800 mA step di/dt = 300 mA/µs, COUT_PRE ≥ 22 µF, LPRE = 10 µH -3 — 3 % Table 100. VPRE electrical characteristics...continued FS26_SDS All information provided in this document is subject to legal disclaimers. © 2025 NXP B.V. All rights reserved. Product short data sheet Rev. 6.0 — 12 December 2025 Document feedback 89 / 156 |
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