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FS26 Datenblatt(PDF) 98 Page - NXP Semiconductors |
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FS26 Datenblatt(HTML) 98 Page - NXP Semiconductors |
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98 / 156 page ![]() NXP Semiconductors FS26 Safety system basis chip with low power for ASIL D/ASIL B TA = –40 °C to 125 °C, unless otherwise specified. VSUP_UVH < VSUP < 36 V, VPRE_PWM + VPRE_HDR < VSUP_PWR < 36 V, unless otherwise specified. All voltages are referenced to ground. Symbol Description Min Typ Max Unit VBST_LINE_OFF_ON VBST transient line in front end configuration with OFF/ON transition VBAT = 12.5 V - 6.5 V dV/dt = 100 mV/μs , LBST = 4.7 μH, IBST = 0 A and 1 A CIN_BST_FE = 47 µF, COUT_BST_FE = 50 μF -5 — — % VBST_LINE_ON_OFF VBST transient line in front end configuration with ON/OFF transition VBAT = 6.5 V - 12.5 V dV/dt = 100 mV/μs , LBST = 4.7 μH, IBST = 0 A and 1 A CIN_BST_FE = 47 µF, COUT_BST_FE = 50 μF — — 1.5 V VBST_LOTR_FE Transient load response in Front end mode 200 mA to 1 A step and 1 A to 200 mA step, di/dt = 800 mA/μs COUT_BST_FE = 40 µF, LBST = 4.7 μH, CIN_BST_FE = 20 μF 2.7 V ≤ VBST_IN ≤ VBST - 1 V, VBST = 7 V -10 — 10 % VBST_LOTR_BE Transient load response in Back end mode 50 mA to 200 mA step and 200 mA to 50 mA step, di/dt = 150 mA/μs COUT_BST_BE = 22 μF, LBST = 4.7 μH, CIN_BST_BE = 44 μF VBST_IN = 4.5 V, VBST = 14 V -5 — 5 % tON_MIN LS minimum ON time VBST_TON_MIN_OTP[1:0] = 00 153 200 235 ns External components Inductor value LBST Nominal[1] Effective[2] 4.7 3.3 4.7 — 4.7 6.1 µH LBST_DCR Inductor DC resistance — 60 — mΩ RSNS_BST Nominal[1] current sense resistor value (±1 %) 20 — 100 mΩ DBST Diode forward voltage drop — 0.4 — V LSRDSON Low-side MOSFET RDS(on) — 50 — mΩ CIN_BST_FE Effective[2] input capacitor value for VBST in front-end 10 — — µF CIN_BST_BE Effective[2] input capacitor value for VBST in back-end (in addition to COUT_PRE) 10 — — µF COUT_BST_FE Effective[2] output capacitor value for VBST in front-end 20 — 150 µF COUT_BST_BE Effective[2] output capacitor value for VBST in back-end 20 — 80 µF Table 104. VBST electrical characteristics...continued [1] For all regulators, the nominal value is the value normalized. [2] For all regulators, the effective value is the value after tolerance, temperature, DC bias and aging removal. 18.3.2 VBST efficiency VBST efficiency vs. current load measurement is shown in Table 105 based on external components and the configuration listed below. If the conditions are different, calculate the efficiency using the FS26 power dissipation tool calculator. Ext. Components CIN_BST_BE 22 µF CIN_BST_BE_ESR 2.5 mΩ COUT_BST_BE 44 µF COUT_BST_BE_ESR 1 mΩ LBST 4.7 µH LBST_DCR 60 mΩ RSNS_BST 20 mΩ DBST 0.5 V Table 105. VBST efficiency measurement settings FS26_SDS All information provided in this document is subject to legal disclaimers. © 2025 NXP B.V. All rights reserved. Product short data sheet Rev. 6.0 — 12 December 2025 Document feedback 98 / 156 |
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