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FS26 Datenblatt(PDF) 98 Page - NXP Semiconductors

Teilenummer FS26
Bauteilbeschribung  Safety system basis chip with low power for ASIL D/ASIL B
PDF  156 Pages
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FS26 Datenblatt(HTML) 98 Page - NXP Semiconductors

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NXP Semiconductors
FS26
Safety system basis chip with low power for ASIL D/ASIL B
TA = –40 °C to 125 °C, unless otherwise specified. VSUP_UVH < VSUP < 36 V, VPRE_PWM + VPRE_HDR < VSUP_PWR < 36 V, unless otherwise specified. All voltages
are referenced to ground.
Symbol
Description
Min
Typ
Max
Unit
VBST_LINE_OFF_ON
VBST transient line in front end configuration with OFF/ON transition
VBAT = 12.5 V - 6.5 V
dV/dt = 100 mV/μs , LBST = 4.7 μH, IBST = 0 A and 1 A
CIN_BST_FE = 47 µF, COUT_BST_FE = 50 μF
-5
—
—
%
VBST_LINE_ON_OFF
VBST transient line in front end configuration with ON/OFF transition
VBAT = 6.5 V - 12.5 V
dV/dt = 100 mV/μs , LBST = 4.7 μH, IBST = 0 A and 1 A
CIN_BST_FE = 47 µF, COUT_BST_FE = 50 μF
—
—
1.5
V
VBST_LOTR_FE
Transient load response in Front end mode
200 mA to 1 A step and 1 A to 200 mA step, di/dt = 800 mA/μs
COUT_BST_FE = 40 µF, LBST = 4.7 μH, CIN_BST_FE = 20 μF
2.7 V ≤ VBST_IN ≤ VBST - 1 V, VBST = 7 V
-10
—
10
%
VBST_LOTR_BE
Transient load response in Back end mode
50 mA to 200 mA step and 200 mA to 50 mA step, di/dt = 150 mA/μs
COUT_BST_BE = 22 μF, LBST = 4.7 μH, CIN_BST_BE = 44 μF
VBST_IN = 4.5 V, VBST = 14 V
-5
—
5
%
tON_MIN
LS minimum ON time
VBST_TON_MIN_OTP[1:0] = 00
153
200
235
ns
External components
Inductor value
LBST
Nominal[1]
Effective[2]
4.7
3.3
4.7
—
4.7
6.1
µH
LBST_DCR
Inductor DC resistance
—
60
—
mΩ
RSNS_BST
Nominal[1] current sense resistor value (±1 %)
20
—
100
mΩ
DBST
Diode forward voltage drop
—
0.4
—
V
LSRDSON
Low-side MOSFET RDS(on)
—
50
—
mΩ
CIN_BST_FE
Effective[2] input capacitor value for VBST in front-end
10
—
—
µF
CIN_BST_BE
Effective[2] input capacitor value for VBST in back-end (in addition to COUT_PRE)
10
—
—
µF
COUT_BST_FE
Effective[2] output capacitor value for VBST in front-end
20
—
150
µF
COUT_BST_BE
Effective[2] output capacitor value for VBST in back-end
20
—
80
µF
Table 104. VBST electrical characteristics...continued
[1]
For all regulators, the nominal value is the value normalized.
[2]
For all regulators, the effective value is the value after tolerance, temperature, DC bias and aging removal.
18.3.2 VBST efficiency
VBST efficiency vs. current load measurement is shown in Table 105 based on external components and
the configuration listed below. If the conditions are different, calculate the efficiency using the FS26 power
dissipation tool calculator.
Ext. Components
CIN_BST_BE
22
µF
CIN_BST_BE_ESR
2.5
mΩ
COUT_BST_BE
44
µF
COUT_BST_BE_ESR
1
mΩ
LBST
4.7
µH
LBST_DCR
60
mΩ
RSNS_BST
20
mΩ
DBST
0.5
V
Table 105. VBST efficiency measurement settings
FS26_SDS
All information provided in this document is subject to legal disclaimers.
© 2025 NXP B.V. All rights reserved.
Product short data sheet
Rev. 6.0 — 12 December 2025
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