FS26 datasheet(96/156 Pages) NXP

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NXP Semiconductors

FS26

Safety system basis chip with low power for ASIL D/ASIL B

VBST_IN

VBST

RSNS_BST

Maximum IBST

7 V

60 mΩ

200 mA

10 V

40 mΩ

140 mA

3.3 V

12 V

20 mΩ

115 mA

7 V

80 mΩ

300 mA

10 V

60 mΩ

210 mA

12 V

40 mΩ

175 mA

5 V

15 V

20 mΩ

140 mA

7 V

100 mΩ

360 mA

10 V

80 mΩ

250 mA

12 V

60 mΩ

210 mA

15 V

40 mΩ

170 mA

6 V

18 V

20 mΩ

140 mA

Table 103. Maximum VBST output current in back-end configuration for an input average current of 500 mA

(DCBST_MAX = 87.5 %, Efficiency = 85 %)

VBST

aaa-045466

RCOMP

RSNS_BST

VDDIO

CCOMP

CIN_BST

VBST_IN

VBST

COUT_BST

LBST

DBST

CHF

SLOPE

COMPENSATION

VBST_FB

VBST_PG

VBST_ISH

VBST_ISL

CONTROLLER

Driver

DIGITAL

PROCESSING

PWM

VBST_G

RBST_PG_PU

Figure 27. VBST schematic with configuration from VPRE

18.3.1 VBST electrical characteristics

TA = –40 °C to 125 °C, unless otherwise specified. VSUP_UVH < VSUP < 36 V, VPRE_PWM + VPRE_HDR < VSUP_PWR < 36 V, unless otherwise specified. All voltages

are referenced to ground.

Symbol

Description

Min

Typ

Max

Unit

Static electrical characteristics

VBST_IN

Input voltage range

2.7

—

VBST

Output voltage (OTP configuration, 250 mV step)

—

VBST_ACC

Output voltage accuracy

-3

—

Table 104. VBST electrical characteristics

FS26_SDS

All information provided in this document is subject to legal disclaimers.

Product short data sheet

Rev. 6.0 — 12 December 2025

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