FS26 datasheet(102/156 Pages) NXP

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NXP Semiconductors

FS26

Safety system basis chip with low power for ASIL D/ASIL B

TA = –40 °C to 125 °C, unless otherwise specified. VSUP_UVH < VSUP < 36 V, VPRE_PWM + VPRE_HDR < VSUP_PWR < 36 V, unless otherwise

specified. All voltages are referenced to ground.

Symbol

Description

Min

Typ

Max

Unit

FOSC_HIGH = 18 MHz (CLK_FREQ_OTP[1:0] = 10)

tCORE_ONOFF_MIN_V

HS minimum ON and OFF time in valley current mode

FOSC_HIGH = 18 MHz (CLK_FREQ_OTP[1:0] = 10)

External Components

CORE_LSEL_OTP[1:0] = 00

Nominal[2] inductor value

Effective[3] inductor value

0.68

—

1.5

µH

CORE_LSEL_OTP[1:0] = 01

Nominal[2] inductor value

Effective[3] inductor value

1.5

—

1.5

µH

CORE_LSEL_OTP[1:0] = 10 or 11

LCORE

Nominal[2] inductor value

Effective[3] inductor value

2.2

1.5

2.2

—

2.2

2.9

µH

RDCR_LCORE

Inductor DC resistance

—

mΩ

CIN_CORE

Effective[3] input capacitor value

2.2

—

µF

Bootstrap capacitor

CBOOT_CORE

Nominal[2]

Effective[3]

—

COUT_CORE

Effective[3] output capacitor

—

100

µF

Table 106. VCORE electrical characteristics...continued

[1]

Covered by characterization only, at ICORE = 1 A, with KITFS26AEEVM.

[2]

For all regulators, the nominal value is the value normalized.

[3]

For all regulators, the effective value is the value after tolerance, temperature, DC bias and aging removal.

18.4.2 VCORE efficiency

VCORE efficiency vs. current load measurement is shown in Table 107 based on external components and

the configuration listed below. If the conditions are different, calculate the efficiency using the FS26 power

dissipation tool calculator.

Ext. C and L

CIN_CORE

µF

CIN_CORE_ESR

2.5

mΩ

COUT_CORE

µF

COUT_CORE_ESR

2.5

mΩ

LCORE

µH

LCORE_DCR

mΩ

CBOOT_CORE

Internal MOSFETs

RHS_CORE

mΩ

QHS

1.2

Table 107. VCORE efficiency measurement settings

FS26_SDS

All information provided in this document is subject to legal disclaimers.

Product short data sheet

Rev. 6.0 — 12 December 2025

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