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FS26 Datenblatt(PDF) 106 Page - NXP Semiconductors |
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FS26 Datenblatt(HTML) 106 Page - NXP Semiconductors |
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106 / 156 page ![]() NXP Semiconductors FS26 Safety system basis chip with low power for ASIL D/ASIL B TA = –40 °C to 125 °C, unless otherwise specified. VSUP_UVH < VSUP < 36 V, VPRE_PWM + VPRE_HDR < VSUP_PWR < 36 V, unless otherwise specified. All voltages are referenced to ground. Symbol Description Min Typ Max Unit VLDOx_LOTR Transient load response ILDOx = 10 mA to 200 mA step and 200 mA to 10 mA di/dt = 100 mA/µs COUT_LDOx = 4.7 µF, CIN_LDO = 1 µF -3 — 3 % VLDOx_LOTR_STBY_HI Transient load response in standby mode ILDOx = 10 mA to 100 mA step and 100 mA to 10 mA di/dt = 100 mA/µs VPRE_PFM = 5.35 V, VLDOx = 5 V COUT_LDOx = 4.7 µF, CIN_LDO = 1 µF -100 — 100 mV VLDOx_LOTR_STBY_ LO [1] Transient load response in standby mode with reduced headroom ILDOx = 10 µA to 10 mA step and 10 µA to 10 mA di/dt = 10 mA/µs VPRE_PFM = 5.05 V , VLDOx = 5 V COUT_LDOx = 4.7 µF , CIN_LDO = 1 µF -1.5 — 1.5 % tON_LDOx Turn on rise time (soft start ramp) — — 500 µs External components CIN_LDO Effective[2] input capacitor (close to LDOIN pin) 0.5 — — µF COUT_LDOx Effective[2] output capacitance 2.35 4.7 15 µF Table 108. LDOx Electrical characteristics...continued [1] For all these parameters, the maximum ambient temperature is TA = 85 °C. [2] For all regulators, the effective capacitor value is the capacitor value after tolerance, DC bias and aging removal. FS26_SDS All information provided in this document is subject to legal disclaimers. © 2025 NXP B.V. All rights reserved. Product short data sheet Rev. 6.0 — 12 December 2025 Document feedback 106 / 156 |
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