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28HS01GTAM03 Datenblatt(PDF) 112 Page - Infineon Technologies AG |
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28HS01GTAM03 Datenblatt(HTML) 112 Page - Infineon Technologies AG |
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112 / 138 page ![]() Datasheet 112 of 138 002-18216 Rev. *W 2022-01-18 256Mb/512Mb/1Gb SEMPER™ Flash Octal interface, 1.8V/3.0V Timing characteristics tPEDS Program/Erase/Data Integrity Check Suspend 80 µs tPEDRS Program/Erase/Data Integrity Check Resume to next Program/Erase/Data Integrity Check Suspend (256T / 512T / 01GT) 250 / 100 / 100 / 100 Table 85 Timing characteristics[45] (Continued) Symbol Parameter Min Typ Max Unit Reference figure Notes 43. Full VCC range and CL = 15pF. 44. Output HI-Z is defined as the point where data is no longer driven. 45. Applicable across all operating temperature options. 46. If Reset# is asserted during the end of tPU, the device will remain in the reset state and tRH will determine when CS# may go Low. 47. Sum of tRP and tRH must be equal to or greater than tRPH. 48. Typical program and erase times assume the following conditions: 25°C, VCC = 1.8V and 3.0V; checkerboard data pattern. 49. The programming time for any OTP programming transaction is the same as tPP. This includes PRSSR_4_1. 50. The programming time for the PRPPB_4_0 transaction is the same as tPP. The erase time for ERPPB_0_0 transaction is the same as tSE. 51. Values are guaranteed by characterization and not 100% tested in production. 52. Guaranteed by design. 53. The Joint Electron Device Engineering Council (JEDEC) standard JESD22-A117 defines the procedural requirements for performing valid endurance and retention tests based on a qualification specification. This methodology is intended to determine the ability of a flash device to sustain repeated data changes without failure (program/erase endurance) and to retain data for the expected life (data retention). Endurance and retention qualifica- tion specifications are specified in JESD47 or may be developed using knowledge-based methods as in JESD94. |
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