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FS26 Datenblatt(PDF) 122 Page - NXP Semiconductors |
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FS26 Datenblatt(HTML) 122 Page - NXP Semiconductors |
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122 / 156 page ![]() NXP Semiconductors FS26 Safety system basis chip with low power for ASIL D/ASIL B FS26 HIGH VOLTAGE BUCK MCU Wake up sources (GPIOx, Wakex, SPI, Long duration timer) VBAT COUT_CORE aaa-045481 LDO1 VCORE LCORE GPIO2 HS used as VCORE PGOOD VREF WAKE LOAD VCCD SPI TRK1/2 FAIL SAFE SATE MACHINE ADC ACTUATORS FOR SAFE STATE ANALOG SENSORS Off board domain Analog and digital monitoring ADC VDDD D NMOS load switch BUK4D16-20 FDME820NZT S G 10 kΩ FCCU1 FCCU2 FS0B FS1B Figure 44. VCORE PGOOD load switch 19.3.2.5 GPIO electrical characteristics TA = –40 °C to 125 °C, unless otherwise specified. VSUP_UVH < VSUP < 36 V, VPRE_PWM + VPRE_HDR < VSUP_PWR < 36 V, unless otherwise specified. All voltages are referenced to ground. Symbol Description Min Typ Max Unit Electrical characteristics Low input voltage detection VIL_GPIOx Low voltage detection (GPIOxTH_OTP = 0) High-voltage detection (GPIOxTH_OTP = 1) — — — — 0.8 0.3 * VBOS V High input voltage detection threshold VIH_GPIOx Low input threshold (GPIOxTH_OTP = 0) High input threshold (GPIOxTH_OTP = 1) 2 0.7 * VBOS — — — — V VIN_HYS Threshold hysteresis 50 120 500 mV tWAKE Wake-up filtering time 50 70 100 µs IHS_GPIOx High-side drive current capability — — 20 mA IHS_ILIM High-side current limitation threshold 25 50 75 mA ILS_GPIOx Low-side drive current capability — — 2 mA ILS_ILIM Low-side current limitation threshold 3 5 7.5 mA ILEAK_GPIOx Input current leakage HS and LS disabled, PU and PD disabled -10 — 10 µA RPU_GPIOx Internal pull-up resistor value 100 200 320 kΩ RPD_GPIOx Internal pull-down resistor value 100 200 320 kΩ Table 120. GPIO electrical characteristics FS26_SDS All information provided in this document is subject to legal disclaimers. © 2025 NXP B.V. All rights reserved. Product short data sheet Rev. 6.0 — 12 December 2025 Document feedback 122 / 156 |
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