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FS26 Datenblatt(PDF) 122 Page - NXP Semiconductors

Teilenummer FS26
Bauteilbeschribung  Safety system basis chip with low power for ASIL D/ASIL B
PDF  156 Pages
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FS26 Datenblatt(HTML) 122 Page - NXP Semiconductors

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NXP Semiconductors
FS26
Safety system basis chip with low power for ASIL D/ASIL B
FS26
HIGH
VOLTAGE
BUCK
MCU
Wake up sources
(GPIOx, Wakex, SPI,
Long duration timer)
VBAT
COUT_CORE
aaa-045481
LDO1
VCORE
LCORE
GPIO2 HS
used as
VCORE
PGOOD
VREF
WAKE
LOAD
VCCD
SPI
TRK1/2
FAIL SAFE
SATE MACHINE
ADC
ACTUATORS FOR
SAFE STATE
ANALOG
SENSORS
Off board domain
Analog and digital
monitoring
ADC
VDDD
D
NMOS
load switch
BUK4D16-20
FDME820NZT
S
G
10 kΩ
FCCU1
FCCU2
FS0B
FS1B
Figure 44. VCORE PGOOD load switch
19.3.2.5 GPIO electrical characteristics
TA = –40 °C to 125 °C, unless otherwise specified. VSUP_UVH < VSUP < 36 V, VPRE_PWM + VPRE_HDR < VSUP_PWR < 36 V, unless otherwise specified. All voltages
are referenced to ground.
Symbol
Description
Min
Typ
Max
Unit
Electrical characteristics
Low input voltage detection
VIL_GPIOx
Low voltage detection (GPIOxTH_OTP = 0)
High-voltage detection (GPIOxTH_OTP = 1)
—
—
—
—
0.8
0.3 * VBOS
V
High input voltage detection threshold
VIH_GPIOx
Low input threshold (GPIOxTH_OTP = 0)
High input threshold (GPIOxTH_OTP = 1)
2
0.7 * VBOS
—
—
—
—
V
VIN_HYS
Threshold hysteresis
50
120
500
mV
tWAKE
Wake-up filtering time
50
70
100
µs
IHS_GPIOx
High-side drive current capability
—
—
20
mA
IHS_ILIM
High-side current limitation threshold
25
50
75
mA
ILS_GPIOx
Low-side drive current capability
—
—
2
mA
ILS_ILIM
Low-side current limitation threshold
3
5
7.5
mA
ILEAK_GPIOx
Input current leakage
HS and LS disabled, PU and PD disabled
-10
—
10
µA
RPU_GPIOx
Internal pull-up resistor value
100
200
320
kΩ
RPD_GPIOx
Internal pull-down resistor value
100
200
320
kΩ
Table 120. GPIO electrical characteristics
FS26_SDS
All information provided in this document is subject to legal disclaimers.
© 2025 NXP B.V. All rights reserved.
Product short data sheet
Rev. 6.0 — 12 December 2025
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